RJP3054DPP Datasheet, Igbt, Renesas Technology

RJP3054DPP Features

• Igbt Low on resistance, High-speed switching Low Qg, Low Qgd Merits High efficiency Small package, Built-in 2 elements Mniaturization Example of Application Circuit (LCD TV, TFT Monitor,

PDF File Details

Part number:

RJP3054DPP

Manufacturer:

Renesas ↗ Technology

File Size:

147.81kb

Download:

📄 Datasheet

Description:

Igbt.

TAGS

RJP3054DPP

Renesas Technology

📁 Related Datasheet

RJP3053DPP - IGBT (Renesas Technology)
April 2010 Renesas Electronics Power MOSFETs and IGBT for PDP Merits Power MOSFET Low ON resistance Low Qg High avalanche tolerance IGBT Low VCE (sat.

RJP3055DPP - IGBT (Renesas Technology)
April 2010 Renesas Electronics Power MOSFETs and IGBT for PDP Merits Power MOSFET Low ON resistance Low Qg High avalanche tolerance IGBT Low VCE (sat.

RJP3056DPK - IGBT (Renesas Technology)
April 2010 Renesas Electronics Power MOSFETs and IGBT for PDP Merits Power MOSFET Low ON resistance Low Qg High avalanche tolerance IGBT Low VCE (sat.

RJP3057DPK - IGBT (Renesas Technology)
April 2010 Renesas Electronics Power MOSFETs and IGBT for PDP Merits Power MOSFET Low ON resistance Low Qg High avalanche tolerance IGBT Low VCE (sat.

RJP3063DPP - IGBT (Renesas Technology)
April 2010 Renesas Electronics Power MOSFETs and IGBT for PDP Merits Power MOSFET Low ON resistance Low Qg High avalanche tolerance IGBT Low VCE (sat.

RJP3064DPP - IGBT (Renesas Technology)
April 2010 Renesas Electronics Power MOSFETs and IGBT for PDP Merits Power MOSFET Low ON resistance Low Qg High avalanche tolerance IGBT Low VCE (sat.

RJP3065DPP - IGBT (Renesas Technology)
April 2010 Renesas Electronics Power MOSFETs and IGBT for PDP Merits Power MOSFET Low ON resistance Low Qg High avalanche tolerance IGBT Low VCE (sat.

RJP3066DPK - IGBT (Renesas Technology)
April 2010 Renesas Electronics Power MOSFETs and IGBT for PDP Merits Power MOSFET Low ON resistance Low Qg High avalanche tolerance IGBT Low VCE (sat.

RJP3067DPK - IGBT (Renesas Technology)
April 2010 Renesas Electronics Power MOSFETs and IGBT for PDP Merits Power MOSFET Low ON resistance Low Qg High avalanche tolerance IGBT Low VCE (sat.

RJP30E2 - N-Channel Power MOSFET (Renesas)
RJP30E2DPP-M0 Silicon N Channel IGBT High Speed Power Switching Features • Trench gate technology (G5H series) • Low collector to emitter saturation v.