RJP30E2DPK-M0 Datasheet, Mosfet, Renesas

RJP30E2DPK-M0 Features

• Mosfet
• Trench gate technology (G5H series) Low collector to emitter saturation voltage VCE(sat) = 1.7 V typ High speed switching tf = 150 ns typ Low lea

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Part number:

RJP30E2DPK-M0

Manufacturer:

Renesas ↗

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📄 Datasheet

Description:

N-channel power mosfet. of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor

RJP30E2DPK-M0 Application

• Applications or use by the military, including but not limited to the development of weapons of mass destruction. Renesas Electronics products and t

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RJP30E2DPK-M0

Renesas

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