RJP30E2DPK-M0 Datasheet - Renesas

RJP30E2DPK-M0 N-Channel Power MOSFET

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RJP30E2DPK-M0 Features

* Trench gate technology (G5H series) Low collector to emitter saturation voltage VCE(sat) = 1.7 V typ High speed switching tf = 150 ns typ Low leak current ICES = 1 μA max R07DS0348EJ0100 Rev.1.00 Apr 12, 2011 Outline RENESAS Package code: PRSS0004ZH-A (Packag

RJP30E2DPK-M0 Datasheet (219.53 KB)