* Low on resistance, High-speed switching Low Qg, Low Qgd Merits High efficiency Small package, Built-in 2 elements Mniaturization Example of Application Circuit (LCD TV, TFT Monitor, Note PC) Full Bridge Vin Vin Pch HAT3029R(30V) HAT3031R(60V) Nch&Pch in 1PKG Half Bridge Pch HAT3029R(30V) HAT3031
RJP3057DPK Datasheet (147.81 KB)
RJP3057DPK
Renesas ↗ Technology
147.81 KB
Igbt.
April 2010 Renesas Electronics
Power MOSFETs and IGBT for PDP
Merits
Power MOSFET Low ON resistance Low Qg High avalanche tolerance IGBT Low VCE (sat.
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