Part number:
RJP30H1DPD
Manufacturer:
File Size:
212.44 KB
Description:
N-channel igbt.
Datasheet Details
of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples.
You are fully responsible for the incorporation of these circuits, software, and information in the design of your equipment.
Renesa
RJP30H1DPD Features
* Trench gate and thin wafer technology (G6H-II series) High speed switching: tr = 80 ns typ., tf = 150 ns typ. Low collector to emitter saturation voltage: VCE(sat) = 1.5 V typ. Low leak current: ICES = 1 A max. R07DS0465EJ0200 Rev.2.00 Jun 15, 2011 Outline RENESAS Package c
Datasheet Details
RJP30H1DPD
212.44 KB
N-channel igbt.
📁 Related Datasheet
📌 All Tags