Part number:
RJP30H1DPD
Manufacturer:
File Size:
212.44 KB
Description:
N-channel igbt.
* Trench gate and thin wafer technology (G6H-II series) High speed switching: tr = 80 ns typ., tf = 150 ns typ. Low collector to emitter saturation voltage: VCE(sat) = 1.5 V typ. Low leak current: ICES = 1 A max. R07DS0465EJ0200 Rev.2.00 Jun 15, 2011 Outline RENESAS Package c
RJP30H1DPD Datasheet (212.44 KB)
RJP30H1DPD
212.44 KB
N-channel igbt.
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