RJP30H1DPD Datasheet, Igbt, Renesas

✔ RJP30H1DPD Features

Trench gate and thin wafer technology (G6H-II series) High speed switching: tr = 80 ns typ., tf = 150 ns typ. Low collector to emitter saturation voltage: VCE(sat

✔ RJP30H1DPD Application

or use by the military, including but not limited to the development of weapons of mass destruction. Renesas

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RJP30H1DPD

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📄 Datasheet

Description:

N-channel igbt. of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor

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Rochester Electronics LLC

IGBT

DigiKey

RJP30H1DPD-A0-Q2

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Unit Price : $1.48

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RJP30H1DPD N-Channel IGBT Renesas