RJP30H2DPK-M0 - N-Channel Power MOSFET

Renesas

RJP30H2DPK-M0 Datasheet Preview — Preview of RJP30H2DPK-M0 PDF

Datasheet Details

Part number	RJP30H2DPK-M0
Manufacturer	Renesas ↗
File Size	221.13 KB
Description	N-Channel Power MOSFET
Datasheet	RJP30H2DPK-M0_Renesas.pdf

RJP30H2DPK-M0 Product details

Description

of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples.

Features

Trench gate and thin wafer technology (G6H-II series) Low collector to emitter saturation voltage: VCE(sat) = 1.4 V typ High speed switching: tf = 100 ns typ, tf = 180 ns typ Low leak current: ICES = 1 A max R07DS0467EJ0200 Rev.2.00 Jun 15, 2011 Outline.

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Published: May 2, 2012 |