RJP30H2DPK-M0 Datasheet, Mosfet, Renesas

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RJP30H2DPK-M0

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📄 Datasheet

Description:

N-channel power mosfet. of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor

✔ RJP30H2DPK-M0 Features

Trench gate and thin wafer technology (G6H-II series) Low collector to emitter saturation voltage: VCE(sat) = 1.4 V typ High speed switching: tf = 100 ns typ, tf

✔ RJP30H2DPK-M0 Application

or use by the military, including but not limited to the development of weapons of mass destruction. Renesas

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RJP30H2DPK-M0 N-Channel Power MOSFET Renesas