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RJP30H2A Datasheet - Renesas

RJP30H2A Silicon N-Channel IGBT

RJP30H2A Features

* Trench gate and thin wafer technology (G6H-II series)

* Low collector to emitter saturation voltage: VCE(sat) = 1.4 V typ

* High speed switching: tf = 100 ns typ, tf = 180 ns typ

* Low leak current: ICES = 1 A max Outline RENESAS Package code: PRSS0004ZH-A (Package name: TO-3PSG

RJP30H2A Datasheet (226.18 KB)

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Datasheet Details

Part number:

RJP30H2A

Manufacturer:

Renesas ↗

File Size:

226.18 KB

Description:

Silicon n-channel igbt.

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RJP30H2A Silicon N-Channel IGBT Renesas

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