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RJP30H2A - Silicon N-Channel IGBT

Renesas

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Datasheet Details

Part number	RJP30H2A
Manufacturer	Renesas ↗
File Size	226.18 KB
Description	Silicon N-Channel IGBT
Datasheet	RJP30H2A-Renesas.pdf

RJP30H2A Product details

Features

Trench gate and thin wafer technology (G6H-II series).
Low collector to emitter saturation voltage: VCE(sat) = 1.4 V typ.
High speed switching: tf = 100 ns typ, tf = 180 ns typ.
Low leak current: ICES = 1 A max Outline.

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Published: Jan 3, 2017 |