Part number:
RJP30H2A
Manufacturer:
File Size:
226.18 KB
Description:
Silicon n-channel igbt.
RJP30H2A Datasheet (226.18 KB)
* Trench gate and thin wafer technology (G6H-II series)
* Low collector to emitter saturation voltage: VCE(sat) = 1.4 V typ
* High speed switching: tf = 100 ns typ, tf = 180 ns typ
* Low leak current: ICES = 1 A max Outline RENESAS Package code: PRSS0004ZH-A (Package name: TO-3PSG
RJP30H2A Datasheet (226.18 KB)
RJP30H2A
226.18 KB
Silicon n-channel igbt.
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