RJP30H2A Datasheet, Igbt, Renesas

RJP30H2A Features

• Igbt
• Trench gate and thin wafer technology (G6H-II series)
• Low collector to emitter saturation voltage: VCE(sat) = 1.4 V typ
• High speed switching: tf = 100 ns t

PDF File Details

Part number:

RJP30H2A

Manufacturer:

Renesas ↗

File Size:

226.18kb

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📄 Datasheet

Description:

Silicon n-channel igbt.

TAGS

RJP30H2A

Renesas

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