RJP30H2A - Silicon N-Channel IGBT
RJP30H2A Features
* Trench gate and thin wafer technology (G6H-II series)
* Low collector to emitter saturation voltage: VCE(sat) = 1.4 V typ
* High speed switching: tf = 100 ns typ, tf = 180 ns typ
* Low leak current: ICES = 1 A max Outline RENESAS Package code: PRSS0004ZH-A (Package name: TO-3PSG
