Datasheet4U Logo Datasheet4U.com

RJP30H2A Silicon N-Channel IGBT

📥 Download Datasheet Datasheet Preview Page 1

Description

Preliminary Datasheet RJP30H2DPK-M0 / RJP30H2A Silicon N Channel IGBT High speed power switching R07DS0467EJ0200 Rev.2.00 Jun 15, 2011 .

📥 Download Datasheet

Preview of RJP30H2A PDF
datasheet Preview Page 2 datasheet Preview Page 3

Features

* Trench gate and thin wafer technology (G6H-II series)
* Low collector to emitter saturation voltage: VCE(sat) = 1.4 V typ
* High speed switching: tf = 100 ns typ, tf = 180 ns typ
* Low leak current: ICES = 1 A max Outline RENESAS Package code: PRSS0004ZH-A (Package name: TO-3PSG

RJP30H2A Distributors

📁 Related Datasheet

RJP3053DPP RJP3054DPP RJP3055DPP RJP3056DPK RJP3057DPK RJP3063DPP

📌 All Tags

RJP30H2A Silicon N-Channel IGBT Renesas
Renesas RJP30H2A-like datasheet
RJP30H2DPK-M0
RJP30H1
RJP30H1DPD
RJP30H1DPP-M0
RJP30E2