Datasheet Specifications
- Part number
- RJP30H1DPP-M0
- Manufacturer
- Renesas ↗
- File Size
- 212.16 KB
- Datasheet
- RJP30H1DPP-M0_Renesas.pdf
- Description
- N-Channel IGBT
Description
Preliminary Datasheet RJP30H1DPP-M0 Silicon N Channel IGBT High speed power switching .
Features
* Trench gate and thin wafer technology (G6H-II series) High speed switching: tr =80 ns typ. , tf = 150 ns typ. Low collector to emitter saturation voltage: VCE(sat)= 1.5 V typ. Low leak current: ICES = 1 A max. Isolated package TO-220FL R07DS0466EJ0200 Rev.2.00 Jun 15, 2Applications
* or use by the military, including but not limited to the development of weapons of mass destruction. Renesas Electronics products and technology may not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any applicable domestic or foreign lawRJP30H1DPP-M0 Distributors
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