RJP30H1DPP-M0 Datasheet, Igbt, Renesas

✔ RJP30H1DPP-M0 Features

Trench gate and thin wafer technology (G6H-II series) High speed switching: tr =80 ns typ., tf = 150 ns typ. Low collector to emitter saturation voltage: VCE(sa

✔ RJP30H1DPP-M0 Application

or use by the military, including but not limited to the development of weapons of mass destruction. Renesas

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RJP30H1DPP-M0

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📄 Datasheet

Description:

N-channel igbt. of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor

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RJP30H1DPP-M0 N-Channel IGBT Renesas