Part number:
RJP30H1DPP-M0
Manufacturer:
File Size:
212.16 KB
Description:
N-channel igbt.
Datasheet Details
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Renesa
RJP30H1DPP-M0 Features
* Trench gate and thin wafer technology (G6H-II series) High speed switching: tr =80 ns typ., tf = 150 ns typ. Low collector to emitter saturation voltage: VCE(sat)= 1.5 V typ. Low leak current: ICES = 1 A max. Isolated package TO-220FL R07DS0466EJ0200 Rev.2.00 Jun 15, 2
Datasheet Details
RJP30H1DPP-M0
212.16 KB
N-channel igbt.
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