DTU Datasheet | Specifications & PDF Download

N-Channel 0-V (D-S) MOSFET '78 1 ZZZGLQ WHNMS PRODUCT SUMMARY VDS (V)  RDS(on) (:) 0.00 at VGS = 10 V 0.00 at VGS = 4.5 V TO-252 I

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FGA25N120ANTDTU — 1200 V, 25 A NPT Trench IGBT FGA25N120ANTDTU 1200 V, 25 A NPT Trench IGBT Features • NPT Trench Technology, Positive Temperature Co

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P-Channel 60-V (D-S) MOSFET DTU6661 www.din-tek.jp PRODUCT SUMMARY VDS (V) - 60 RDS(on) () 0.0208 at VGS = - 10 V 0.0263 at VGS = - 4.5 V ID (A)

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D1/D2http://www.din-tek.jp S1G1 S2 G2 N- and P-Channel 40 V (D-S) MOSFET DTU4706 www.din-tek.jp PRODUCT SUMMARY N-Channel P-Channel VDS (V) 40 -

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D1/D2http://www.din-tek.jp S1G1 S2 G2 N- and P-Channel 30 V (D-S) MOSFET DTU3708 www.din-tek.jp PRODUCT SUMMARY N-Channel P-Channel VDS (V) 30 -

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DTU11N65SJ/DTP11N6SJ/DTP11N6FSJ www.din-tek.jp N-Channel 650V (D-S) Super Junction Power MOSFET PRODUCT SUMMARY VDS (V) at TJ max. 650 RDS(on) m

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D56 / www.daysemi.jp N-Channel 30 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) 0.0051 at VGS = 10 V 0.0063 at VGS = 4.5 V ID (A) 55d 55d

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P-Channel 100 V (D-S) MOSFET DTU25P10 www.din-tek.jp PRODUCT SUMMARY VDS (V) - 100 RDS(on) (Ω) 0.08 at VGS = - 10 V 0.09 at VGS = - 4.5 V ID (A)

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P-Channel 100 V (D-S) MOSFET DTU19P10C www.din-tek.jp PRODUCT SUMMARY VDS (V) - 100 RDS(on) (Ω) 0.035 at VGS = - 10 V 0.038 at VGS = - 4.5 V ID (

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P-Channel 40-V (D-S) MOSFET DTU60P04 www.din-tek.jp PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.012 at VGS = - 10 V - 40 0.018 at VGS = - 4.5 V ID (A)

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DTP11N60SJ/DTP11N60FSJ/DTU11N60SJ/DTL11N60SJ www.din-tek.jp N-Channel 600V (D-S) Super Junction Power MOSFET PRODUCT SUMMARY VDS (V) at TJ max. 600

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DTU10N65SJ/DTP10N6SJ/DTP10N6FSJ www.din-tek.jp N-Channel 650V (D-S) Super Junction Power MOSFET PRODUCT SUMMARY VDS (V) at TJ max. 650 RDS(on) m

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N-Channel 60 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 60 RDS(on) () 0.0093 at VGS = 10 V 0.0122 at VGS = 4.5 V ID (A)a 55 50 FEATURES • 175 °C Jun

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N-Channel 100 V (D-S) MOSFET DTU10N10 www.din-tek.jp PRODUCT SUMMARY VDS (V) 100 RDS(on) () 0.145 at VGS = 10 V ID (A) 10 TO-252 FEATURES • Tr

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N-Channel 30 V (D-S) MOSFET '78 1S ZZZGLQ WHNMS PRODUCT SUMMARY VDS (V)  RDS(on) (:)  DW9*6 9  DW9*6 9 ID (A) G

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FQPF218YDTU N-Channel QFET® MOSFET FQPF2N80YDTU N-Channel QFET® MOSFET 80 V, 1.5 A, Ω July 2013 Description Features This N-Channel enhance

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N-Channel 60-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 60 www.din-tek.jp DTU40N06 FEATURES ID (A) 40 rDS(on) (W) 0.016 @ VGS = 10 V D TrenchFETr Pow

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D561 www.daysemi.jp P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) (Ω) 0.0125 at VGS = - 10 V 0.0205 at VGS = - 4.5 V

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DTL1N60/DTP1N60/DTU1N60 Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration VGS = 10 V 14 2.7 8.1 Single 6

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IGBT - Field Stop 650 V, 40 A FGH40N65UFDTU, FGH40N65UFDTU-F085 Description Using novel field stop IGBT technology, ON Semiconductor’s field stop IGBT

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