D56/ www.daysemi.jp N-Channel 30-V (D-S) MOSF.
FGH20N60SFDTU-F085 - IGBT
IGBT - Field Stop 600 V, 20 A FGH20N60SFDTU, FGH20N60SFDTU-F085 Description Using Novel Field Stop IGBT Technology, ON Semiconductor’s new series of F.DTU35N06 - N-Channel MOSFET
N-Channel 60-V (D-S) MOSFET DTU35N06 www.din-tek.jp PRODUCT SUMMARY VDS (V) 60 rDS(on) (W) 0.033@ VGS = 10 V TO-252 GDS Top View ID (A) 35 FEA.FGH40N60SFDTU - IGBT
IGBT - Field Stop 600 V, 40 A FGH40N60SFDTU, FGH40N60SFDTU-F085 Description Using Novel Field Stop IGBT Technology, onsemi’s new series of Field Stop .40N06 - DTU40N06
N-Channel 60-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 60 www.din-tek.jp DTU40N06 FEATURES ID (A) 40 rDS(on) (W) 0.016 @ VGS = 10 V D TrenchFETr Pow.DTU3708 - N- and P-Channel MOSFET
D1/D2http://www.din-tek.jp S1G1 S2 G2 N- and P-Channel 30 V (D-S) MOSFET DTU3708 www.din-tek.jp PRODUCT SUMMARY N-Channel P-Channel VDS (V) 30 - .DTU25P10 - P-Channel MOSFET
P-Channel 100 V (D-S) MOSFET DTU25P10 www.din-tek.jp PRODUCT SUMMARY VDS (V) - 100 RDS(on) (Ω) 0.08 at VGS = - 10 V 0.09 at VGS = - 4.5 V ID (A) .DTU40P06 - P-Channel MOSFET
P-Channel 60 V (D-S) MOSFET DTU40P06 www.din-tek.jp PRODUCT SUMMARY VDS (V) RDS(on) () 0.045 at VGS = - 10 V - 60 0.054 at VGS = - 4.5 V ID (A).DTU120N04 - N-Channel MOSFET
N-Channel 0-V (D-S) MOSFET '781 ZZZGLQWHNMS PRODUCT SUMMARY VDS (V) RDS(on) (:) 0.00 at VGS = 10 V 0.00 at VGS = 4.5 V TO-252 I.FGA25N120ANTDTU - IGBT
FGA25N120ANTDTU — 1200 V, 25 A NPT Trench IGBT FGA25N120ANTDTU 1200 V, 25 A NPT Trench IGBT Features • NPT Trench Technology, Positive Temperature Co.FGH40N65UFDTU-F085 - IGBT
IGBT - Field Stop 650 V, 40 A FGH40N65UFDTU, FGH40N65UFDTU-F085 Description Using novel field stop IGBT technology, ON Semiconductor’s field stop IGBT.DTU09N03S - N-Channel MOSFET
N-Channel 30 V (D-S) MOSFET '781S ZZZGLQWHNMS PRODUCT SUMMARY VDS (V) RDS(on) (:) DW9*6 9 DW9*6 9 ID (A) G.DTU15N10 - N-Channel MOSFET
D56/ www.daysemi.jp N-Channel 100 V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) 100 RDS(on) () 0.095 at VGS = 10 V 0.100 at VGS = 6 V ID (A) 1.DTU30N10 - N-Channel MOSFET
N-Channel 100-V (D-S) MOSFET '7830110 ZZZGLQWHNMS PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (:) 100 0.0 at VGS = 10 V 0.0 at VGS = V ID .FGH40N60SFDTU-F085 - IGBT
IGBT - Field Stop 600 V, 40 A FGH40N60SFDTU, FGH40N60SFDTU-F085 Description Using Novel Field Stop IGBT Technology, onsemi’s new series of Field Stop .FGA25N120ANTDTU-F109 - NPT Trench IGBT
FGA25N120ANTDTU — 1200 V, 25 A NPT Trench IGBT FGA25N120ANTDTU 1200 V, 25 A NPT Trench IGBT Features • NPT Trench Technology, Positive Temperature Co.KB3063 - GPRS DTU User Manual
S Shenzhen Kingbird Network Technology CO.,LTD KB3063 GPRS DTU KB3063 GPRS DTU User Manual Shenzhen Kingbird Network Technology CO.,LTD Add: 12C,1.DTU60N02 - N-Channel MOSFET
N-Channel 20-V (D-S) MOSFET DTU0N0 www.din-tek.jp PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (Ω) 0.0061 at VGS = 4.5 V 20 0.0084 at VGS = 2.5 V ID (.DTU55N06 - N-Channel MOSFET
N-Channel 60 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 60 RDS(on) () 0.0093 at VGS = 10 V 0.0122 at VGS = 4.5 V ID (A)a 55 50 FEATURES • 175 °C Jun.DTU15N15 - N-Channel MOSFET
N-Channel 150 V (D-S) MOSFET DTU15N15 www.din-tek.jp PRODUCT SUMMARY VDS (V) 150 RDS(on) () 0.247 at VGS = 10 V 0.255 at VGS = 4.5 V ID (A) 15 1.FGH60N60SFDTU-F085 - IGBT
IGBT - Field Stop 600 V, 60 A FGH60N60SFDTU-F085 Description Using Novel Field Stop IGBT Technology, ON Semiconductor’s new series of Field Stop IGBTs.