Duct Datasheet | Specifications & PDF Download

www.fairchildsemi.com FSDM0565R Green Mode Fairchild Power Switch (FPSTM) Features • Internal Avalanche Rugged Sense FET • Advanced Burst-Mode operat

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MBR3045ST, MBRB3045CT-1 Switch‐mode Power Rectifier Features and Benefits • Dual Diode Construction − Terminals 1 and 3 May Be Connected for Paralle

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NCP1010, NCP1011, NCP1012, NCP1013, NCP1014 Self-Supplied Monolithic Switcher for Low StandbyPower Offline SMPS The NCP101X series integrates a fixed

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MBRP3045N — Schottky Barrier Rectifier MBRP3045N Schottky Barrier Rectifier Applications • Switched mode power supply • Freewheeling diodes Features

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Green Mode Power Switch FSDH321, FSDL321 Description Each product in the FSDx321 (x for H, L) family consists of an integrated Pulse Width Modulator

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NCP1010, NCP1011, NCP1012, NCP1013, NCP1014 Self-Supplied Monolithic Switcher for Low StandbyPower Offline SMPS The NCP101X series integrates a fixed

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MMBT5087L Low Noise Transistor PNP Silicon Features • NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requir

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TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5200 Power Amplifier Applications 2SC5200 Unit: mm • High breakdown voltage: VCEO = 230 V (mi

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               ENABLE 1nF 6 STAT BATP 2 BIAS 5 10nF 8 ENETA3000SW 3 22uF 2.2uH RISET 7 ISET BATC 1 BATN 4 10uF 10uF Li+ Batt

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isc Adjustable Voltage Regulator INCHANGE Semiconductor LM317 FEATURES ·Output Voltage Range :1.2V to 37V ·Output Current In Excess of 1.5A ·0.1% Li

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isc Three Terminal Positive Voltage Regulator 7812 FEATURES ·Output current in excess of 1.5A ·Output voltage of 12V ·Internal thermal overload prot

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INCHANGE Semiconductor isc Silicon NPN RF Transistor isc RF Product Specification 2SC2026 DESCRIPTION ·Low Noise NF= 3.0dB TYP. @ f= 500MHz ·High Po

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KA317 / LM317 — 3-Terminal Positive Adjustable Regulator KA317 / LM317 3-Terminal Positive Adjustable Regulator September 2014 Features • Output-Cu

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1N4728 THRU 1N4764 ZENER DIODES FEATURES DO-41 Glass ♦ Silicon Planar Power Zener Diodes ♦ For use in stabilizing and clipping circuits with high pow

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HM2301B P-Channel Enhancement Mode Power MOSFET Description The HM2301B uses advanced trench technology to provide excellent RDS(ON), low gate charge

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LJ12A3-4-Z/BX (A-RF-C-00014) * 140.- INDUCTIVE PROXIMITY SENSOR LJ12A3-4-Z/BX NPN, 3 WIRE ON, DIAMETER 12 mm., PROXIMITY SW. (ใชไ้ ดก้ บั โลหะเทา่

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CI-MCP Specification 16GB eNAND (x8) + 16Gb LPDDR3 (x32) This document is a general product description and is subject to change without notice. SK h

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AO3400 30V N-Channel MOSFET General Description Product Summary The AO3400 combines advanced trench MOSFET technology with a low resistance package

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HT73xx Series Low Power Consumption LDO Features • Ultra low quiescent current: 3.5µA (typ.) • High input voltage (up to 12V) • Output voltage: 1.8V,

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LC1206A Rev.A AC/DC v v v 800V v v 0.10W v 、 v ， v OTP v 2013-V5 v 6W， 8W v ,, ² ² ² LC1206A 、 PWM ， 。 ， 、， ，， 。 ，。 800V， 90

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