WESTCODE An IXYS Company Date:- 3 Jan, 2012 Data .
Matsuki
ME08N20-G - N-Channel MOSFET
ME08N20/ME08N20-G N- Channel 200V (D-S) MOSFET GENERAL DESCRIPTION The ME08N20 is the N-C hannel lo gic e nhancement mo de p ower field effect transis.
INCHANGE
TK100E08N1 - N-Channel MOSFET
isc N-Channel MOSFET Transistor INCHANGE Semiconductor TK100E08N1，ITK100E08N1 ·FEATURES ·Low drain-source on-resistance: RDS(on) ≤3.2mΩ. (VGS = 10 V.
Toshiba
K80E08K3 - TK80E08K3
Target Specification TK80E08K3 ) TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U−MOS TK80E08K3 E-Bike/UPS/Inverter Unit: mm Low drain.
ABB
5SNE0800M170100 - IGBT Module
VCE = IC = 1700 V 800 A ABB HiPakTM IGBT Module 5SNE 0800M170100 • Low-loss, rugged SPT chip-set • Smooth switching SPT chip-set for good EMC • Ind.
ABB
5SNE0800E330100 - IGBT Module
VCE = IC = 3300 V 800 A ABB HiPakTM IGBT Module 5SNE 0800E330100 PRELIMINARY • Low-loss, rugged SPT chip-set • Smooth switching SPT chip-set for g.
Toshiba Semiconductor
TK100E08N1 - Silicon N-Channel MOSFET
MOSFETs Silicon N-channel MOS (U-MOS-H) TK100E08N1 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS.
GeneSiC
GE08MPS06A - Silicon Carbide Schottky Diode
GE08MPS06A 650V 8A SiC Schottky MPS™ Diode Silicon Carbide Schottky Diode Features • Gen5 Thin Chip Technology for Low VF • Low Conduction Losses for .
GeneSiC
GE08MPS06E - Silicon Carbide Schottky Diode
GE08MPS06E 650V 8A SiC Schottky MPS™ Diode Silicon Carbide Schottky Diode Features • Gen5 Thin Chip Technology for Low VF • Low Conduction Losses for .
UNIVERSAL MICROELECTRONICS
AD14AE080 - Active Delay Lines
& UNIVERSAL MICROELECl'llCOOC:S CO., LTD. ACTIVE DELAY LINES AD14AE SERIES: 14-PIN OIL-SINGLE OUTPUT FEATURES: e TTL and DTL Compatible •Single Outp.
LG
LM190E08-TLG1 - LCD Module
www.DataSheet4U.net LM190E08 Liquid Crystal Display Product Specification SPECIFICATION FOR APPROVAL (◆) Preliminary Specification ( ) Final Speci.
Matsuki
ME08N20 - N-Channel MOSFET
ME08N20/ME08N20-G N- Channel 200V (D-S) MOSFET GENERAL DESCRIPTION The ME08N20 is the N-C hannel lo gic e nhancement mo de p ower field effect transis.
LG
LM190E08-TLJ4 - SXGA TFT LCD
Global LCD Panel Exchange Center www.panelook.com Product Specification LM190E08 Liquid Crystal Display SPECIFICATION FOR APPROVAL () Preliminar.
NCE Power Semiconductor
NCE08N65D - N-Channel Super Junction Power MOSFET
NCE08N65D,NCE08N65,NCE08N65F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced super junction technology .
NCE Power Semiconductor
NCE08N65K - N-Channel Super Junction Power MOSFET
NCE08N65I,NCE08N65K N-Channel Super Junction Power MOSFET General Description The series of devices use advanced super junction technology and desig.
CHIMEI
EE080NA-06A - LCD MODULE
CHIMEI INNOLUX DISPLAY CORPORATION LCD MODULE S P E C I F I C AT I O N Customer: Model Name: Date: Version: EE080NA-06A 2011/05/25 01 ■Preliminary .
Vishay
RCWE0805 - Thick Film Surface Mount Chip Resistors
www.vishay.com RCWE Vishay Dale Thick Film Surface Mount Chip Resistors, Wraparound, Extremely Low Value (0.01 Ω to 0.976 Ω) LINKS TO ADDITIONAL RE.
Cystech Electonics
MTE080A10Q8 - Dual N-Channel Enhancement Mode Power MOSFET
CYStech Electronics Corp. Spec. No. : C871Q8 Issued Date : 2016.11.28 Revised Date : Page No. : 1/9 Dual N-Channel Enhancement Mode Power MOSFET MTE.
