E32 Datasheet | Specifications & PDF Download

Standalone 1A Linear Lithium Battery Charger With Thermal Regulation CE3211 Series  INTRODUCTION: The CE3211 is a complete constant-current/ consta

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14118 Stowe Drive, Suite B Poway, CA 92064 TEL: (858) 621-2700 | FAX: (858) 486-1927 URL: www.zcomm.com EMAIL: applications@zcomm.com Voltage-Controll

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MN101E32 Series Type Internal ROM type ROM (byte) RAM (byte) Package (Lead-free) Minimum Instruction Execution Time MN101EF32D FLASH 64K+8K 4K LQFP0

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www.DataSheet4U.com C to KU BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET FEATURES • SUPER LOW NOISE FIGURE: 0.45 dB TYP at 12 GHz Noise Figure, NF

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DATA SHEET HETERO JUNCTION FIELDEFFECT TRANSISTOR NE321000 C to Ka BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET CHIP DESCRIPTION The NE321000 is

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DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE32400, NE24200 C to Ka BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET CHIP DESCRIPTION NE3240

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www.DataSheet4U.com ULTRA LOW NOISE PSEUDOMORPHIC HJ FET FEATURES • SUPER LOW NOISE FIGURE: 0.35 dB Typ at f = 12 GHz Noise Figure, NF (dB) NE321000

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PI3PCIE3242 3.3V PCI Express® 3.0 4 Channel 2x2 Exchange Switch Features ÎÎ4 Differential Channel 2x2 Exchange Switch ÎÎPCI Express® 3.0 performanc

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www.DataSheet4U.com BSM35GD120DN2E3224 Circuit Diagram Package Outlines Dimensions in mm Weight: 180 g 1 Oct-20-1997

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DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE32484A C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION The NE32484A is a H

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DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE32484A C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION The NE32484A is a H

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Product Description Peregrine’s PE3236 is a high performance integer-N PLL capable of frequency synthesis up to 2.2 GHz. The superior phase noise perf

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Pb Lead-free Green A product Line of Diodes Incorporated PI3PCIE3242A 3.3V PCI Express® 3.0 4 Channel 2x2 Exchange Switch Features ÎÎ4 Differential

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Drop-InDISReplacement:CONTICE3512K2NUED DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE3210S01 X to Ku BAND SUPER LOW NOISE AMPLIFER N-CHANNEL

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Data Sheet ADATE324 1.6 GHz Quad Integrated DCL with VHH Drive Capability, Level Setting DACs, and On-Chip Calibration Registers FEATURES GENERAL

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BSM 50 GD120DN2E3226 IGBT Power Module • Power module • 3-phase full-bridge • Including fast free-wheel diodes • Package with insulated metal base p

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TECH. CORP. SPECIFICATIONS CUSTOMER SAMPLE CODE MASS PRODUCTION CODE SAMPLE VERSION SPECIFICATIONS EDITION DRAWING NO. (Ver.) PACKAGING NO. (Ver.)

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E2V0038-37-X2 ¡ electronic components OE3202G-004, OE3202G-010 EDGE EMITTING DIODES 1.3 mm Edge-Emitting LED DIP Module OE3202G-004, OE3202G-010 GE

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www.DataSheet4U.com Technische Information / Technical Information IGBT-Module IGBT-Modules BSM25GD120DLCE3224 Höchstzulässige Werte / Maximum rate

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