W3E32M64S-XSBX Description
The 256MByte (2Gb) DDR SDRAM is a high-speed CMOS, dynamic random-access, memory using 4 chips containing 536,870,912 bits. Each chip is internally configured as a quad-bank DRAM. The 256MB DDR SDRAM uses a double data rate ar chi tec ture to achieve high-speed operation.
W3E32M64S-XSBX Key Features
- DDR SDRAM rate = 200, 250, 266, 333-- Package
- 208 Plastic Ball Grid Array (PBGA), 13 x 22mm
- Can be user organized as 2x32Mx32 or 4x32Mx16
- Weight: W3E32M64S-XSBX
- 1.5 grams typical
- 73% Space Savings vs. FPBGA
- 43% Space Savings vs TSOP Reduced part count 21% I/O reduction vs TSOP
- 13% I/O reduction vs FPBGA Reduced trace lengths for lower parasitic capacitance Suitable for hi-reliability
W3E32M64S-XSBX Applications
- This product is subject to change without notice
- For 333Mbs operation of Industrial temperature CL =