W3E32M64S-XBX Description
The 256MByte (2Gb) DDR SDRAM is a high-speed CMOS, dynamic random-access, memory using 4 chips containing 536,870,912 bits. Each chip is internally configured as a quad-bank DRAM. The 256MB DDR SDRAM uses a double data rate ar chi tec ture to achieve high-speed operation.
W3E32M64S-XBX Key Features
- DDR SDRAM rate = 200, 250, 266, 333Mb/s Package
- 219 Plastic Ball Grid Array (PBGA), 25mm x 25mm, 625mm2
- 41% SPACE SAVINGS vs. TSOP Reduced part count Reduced trace lengths for lower parasitic capacitance Suitable for hi-reli