E3M-V Datasheet | Specifications & PDF Download

E3M0900170J 1700V 900mΩ Silicon Carbide Power MOSFET N-Channel Enhancement Mode Features • High blocking voltage with low on-resistance • High-speed

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E3M0900170D 1700V 900mΩ Silicon Carbide Power MOSFET N-Channel Enhancement Mode Features • High blocking voltage with low on-resistance • High-speed

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E3M0040120J2 Silicon Carbide Power MOSFET E-Series Automotive N-Channel Enhancement Mode Features Package • 3rd generation SiC MOSFET techn

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E3M0120090J Silicon Carbide Power MOSFET E-Series Automotive N-Channel Enhancement Mode Features • 3rd generation of SiC MOSFET technology • High bloc

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E3M0160120K Silicon Carbide Power MOSFET E-Series Automotive N-Channel Enhancement Mode Features Package • 3rd generation SiC MOSFET techno

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E3M0075120D Silicon Carbide Power MOSFET E-Series Automotive N-Channel Enhancement Mode Features • 3rd generation SiC MOSFET technology •

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E3M0032120J2 Silicon Carbide Power MOSFET E-Series Automotive N-Channel Enhancement Mode Features Package • 3rd generation SiC MOSFET techn

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R Color Mark Sensor with Teach Function E3M-V High-speed Registration Mark Detection H Fast 50 µs response H Pushbutton programming for quick setup

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E3M0160120J2 Silicon Carbide Power MOSFET E-Series Automotive N-Channel Enhancement Mode Features Package • 3rd generation SiC MOSFET techn

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E3M0040120K Silicon Carbide Power MOSFET E-Series Automotive N-Channel Enhancement Mode Features Package • 3rd generation SiC MOSFET techno

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E3M0021120J2 Silicon Carbide Power MOSFET E-Series Automotive N-Channel Enhancement Mode Features Package • 3rd generation SiC MOSFET techn

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E3M0160120D Silicon Carbide Power MOSFET E-Series Automotive N-Channel Enhancement Mode Features • 3rd generation SiC MOSFET technology •

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VDS 900 V E3M0120090D Silicon Carbide Power MOSFET E-Series Automotive ID @ 25˚C 23 A RDS(on) 120 mΩ N-Channel Enhancement Mode

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E3M0075120D Silicon Carbide Power MOSFET E-Series Automotive N-Channel Enhancement Mode Features Package • 3rd generation SiC MOSFET te

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E3M0032120K Silicon Carbide Power MOSFET E-Series Automotive N-Channel Enhancement Mode Features Package • 3rd generation SiC MOSFET techno

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E3M0075120K Silicon Carbide Power MOSFET E-Series Automotive N-Channel Enhancement Mode Features Package • 3rd generation SiC MOSFET techno

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E3M0060065K Silicon Carbide Power MOSFET E-Series Automotive N-Channel Enhancement Mode Features Package • 3rd generation SiC MOSFET techno

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256Mbit MOBILE DDR SDRAM based on 4M x 4Bank x16 I/O Specification of 256Mb (16Mx16bit) Mobile DDR SDRAM Memory Cell Array - Organized as 4banks of

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E3M0045065K Silicon Carbide Power MOSFET E-Series Automotive N-Channel Enhancement Mode Features Package • 3rd generation SiC MOSFET techno

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R Color Mark Sensor with Teach Function E3M-V High-speed Registration Mark Detection H Fast 50 µs response H Pushbutton programming for quick setup

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