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E50N06 Datasheet | Specifications & PDF Download

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E50N06 Power MOSFET

E 50N06 HEXFET® Power MOSFET Dynamic dv/dt Ratin.

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E50N06 - Power MOSFET

E 50N06 HEXFET® Power MOSFET Dynamic dv/dt Rating 175 ْC Operating Temperature Fast switching Ease of Paralleling Simple Drive Requirements VDSS = 6
Rating: 1 (4 votes)
Matsuki Logo Matsuki

ME50N06T - N-Channel MOSFET

N-Channel 60-V (D-S) MOSFET ME50N06T/ME50N06T-G GENERAL DESCRIPTION The ME50N06T is the N-Channel logic enhancement mode power field effect transist
Rating: 1 (3 votes)
Matsuki Logo Matsuki

ME50N06A - N-Channel MOSFET

N- Channel 60V (D-S) MOSFET ME50N06A/ME50N06A-G GENERAL DESCRIPTION The ME50N06A is the N-Channel logic enhancement mode power field effect transist
Rating: 1 (3 votes)
Matsuki Logo Matsuki

ME50N06T-G - N-Channel MOSFET

N-Channel 60-V (D-S) MOSFET ME50N06T/ME50N06T-G GENERAL DESCRIPTION The ME50N06T is the N-Channel logic enhancement mode power field effect transist
Rating: 1 (2 votes)
Matsuki Logo Matsuki

ME50N06A-G - N-Channel MOSFET

N- Channel 60V (D-S) MOSFET ME50N06A/ME50N06A-G GENERAL DESCRIPTION The ME50N06A is the N-Channel logic enhancement mode power field effect transist
Rating: 1 (2 votes)

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