EB8 Datasheet | Specifications & PDF Download

PEB 8024 - Half-bridge SiC power module VDC Ileg,rms fsw, max Eon-off 800 V 24 A 200 kHz 800 µJ Rev. C / March 2021 GENERAL DESCRIPTION The PEB 80

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CEP85A3/CEB85A3 N-Channel Enhancement Mode Field Effect Transistor FEATURES 25V, 90A, RDS(ON) = 6mΩ @VGS = 10V. RDS(ON) = 9mΩ @VGS = 4.5V. Super hig

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CEP840A/CEB840A CEF840A N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES Type CEP840A CEB840A CEF840A VDSS 500V 500V 500V

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CEP840L/CEB840L CEF840L N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES Type CEP840L CEB840L VDSS 500V 500V CEF840L 50

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PEB 8038 - Half-bridge SiC power module VDC Ileg,rms fsw, max 800 V 38 A 50 kHz Rev. A / March 2021 GENERAL DESCRIPTION The PEB 8038 is a half-bri

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CEP85N75V/CEB85N75V N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 75V, 85A, RDS(ON) = 12mΩ @VGS = 12V. RDS(ON) = 13mΩ @V

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N-Channel Enhancement Mode Field Effect Transistor FEATURES Type CEP80N75 CEB80N75 CEF80N75 VDSS 75V 75V 75V RDS(ON) 13mΩ 13mΩ 13mΩ ID 80A 80A 80A e

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CEP830G/CEB830G CEF830G N-Channel Enhancement Mode Field Effect Transistor FEATURES Type CEP830G CEB830G VDSS 500V 500V CEF830G 500V RDS(ON) 1.5

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CEP85N75/CEB85N75 CEF85N75 N-Channel Enhancement Mode Field Effect Transistor FEATURES Type CEP85N75 CEB85N75 CEF85N75 VDSS 75V 75V 75V RDS(ON) 12

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CEP83A3G/CEB83A3G N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 30V, 102A, RDS(ON) = 4.2 mΩ @VGS = 10V. RDS(ON) = 6.2 mΩ

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CEP840N/CEB840N CEF840N N-Channel Enhancement Mode Field Effect Transistor FEATURES Type CEP840N CEB840N VDSS 500V 500V CEF840N 500V RDS(ON) 0.8

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CEP840B/CEB840B N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 440V, 9A,RDS(ON) = 0.76Ω @VGS = 10V. Super high dense cell

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CEP83A3/CEB83A3 N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V, 100A, RDS(ON) = 5.3mΩ @VGS = 10V. RDS(ON) = 8.0mΩ @VGS = 4.5V. Super

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PKN12 Outline 1.3 1.5 5.4 7.2 ¿4 ¿1 ¿4 6.8 R EF . ¿1 2-M1.4x0.3 Specifications Model PKN12EB85B PKN12EB105B Operating Voltage (V) 0 to 4.5 0 t

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CEP80N15/CEB80N15 CEF80N15 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES Type CEP80N15 CEB80N15 CEF80N15 VDSS 150V 150

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Filters for Communication Equipment o GSM1900 Dot Marking (ø0.3) 1.35±0.05 ∗ (0.20) Dot Marking (ø0.3) 2.0±0.1 ∗ (0.20) 0.6 max. 1.4±0.1 0.6

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CEP84A4/CEB84A4 N-Channel Enhancement Mode Field Effect Transistor FEATURES 40V, 90A, RDS(ON) = 5.1mΩ @VGS = 10V. RDS(ON) = 7.8mΩ @VGS = 4.5V. Super

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