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EB8 Datasheet, Features, Application

EB8 Edgeboard Connectors

www.DataSheet.co.kr EB8 Vishay Dale Edgeboard Co.

Atmel Corporation

RFID - RFID Application Kit TMEB8704

 w w a D . w S a t e e h U 4 t m o .c w w w t a .D S a e h U 4 t e .c m o w w w .D a t a e h S 4 t e U m o .c .
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CET

CEB840L - N-Channel MOSFET

 CEP840L/CEB840L CEF840L N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES Type CEP840L CEB840L VDSS 500V 500V CEF840L 50.
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CET

CEB83A3G - N-Channel MOSFET

 CEP83A3G/CEB83A3G N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 30V, 102A, RDS(ON) = 4.2 mΩ @VGS = 10V. RDS(ON) = 6.2 mΩ.
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Chino-Excel Technology

CEB803AL - N-Channel Logic Level Enhancement Mode Field Effect Transistor

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Chino-Excel Technology

CEB8060 - N-Channel Logic Level Enhancement Mode Field Effect Transistor

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Chino-Excel Technology

CEB8060L - N-Channel Logic Level Enhancement Mode Field Effect Transistor

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CET

CEB83A3 - N-Channel MOSFET

 CEP83A3/CEB83A3 N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V, 100A, RDS(ON) = 5.3mΩ @VGS = 10V. RDS(ON) = 8.0mΩ @VGS = 4.5V. Super .
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NMB-MAT

PKN12EB85B - Minibea Motor

 PKN12 Outline 1.3 1.5 5.4 7.2 ¿4 ¿1 ¿4 6.8 R EF . ¿1 2-M1.4x0.3 Specifications Model PKN12EB85B PKN12EB105B Operating Voltage (V) 0 to 4.5 0 t.
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Vishay Siliconix

EB8 - Edgeboard Connectors

 www.DataSheet.co.kr EB8 Vishay Dale Edgeboard Connectors, Dual Readout FEATURES • 0.156" C-C x 0.200" grid (3.96 mm x 5.08 mm) • Greater design lati.
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Panasonic Semiconductor

ECOS2EB821DA - Aluminum Electrolytic Capacitors

 Panasonic Industrial Company Aluminum Electrolytic Capacitors TS-HA/HB Series 105°C, 3000 hours Long 3000 hour life at 105°C with high ripple curr.
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Panasonic Semiconductor

ECEC2EB821DA - Aluminum Electrolytic Capacitors

 Panasonic Industrial Company Aluminum Electrolytic Capacitors TS-HA/HB Series 105°C, 3000 hours Long 3000 hour life at 105°C with high ripple curr.
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MuRata

SAFEB881MFL0F00 - Filters

 o GSM850 Filters for Communication Equipment Dot Marking (ø0.3) 1.35±0.05 ∗ (0.20) Dot Marking (ø0.3) 2.0±0.1 ∗ (0.20) 0.6 max. 1.4±0.1 0.6 m.
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CET

CEB85N75 - N-Channel MOSFET

 CEP85N75/CEB85N75 CEF85N75 N-Channel Enhancement Mode Field Effect Transistor FEATURES Type CEP85N75 CEB85N75 CEF85N75 VDSS 75V 75V 75V RDS(ON) 12.
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CET

CEB830G - N-Channel MOSFET

 CEP830G/CEB830G CEF830G N-Channel Enhancement Mode Field Effect Transistor FEATURES Type CEP830G CEB830G VDSS 500V 500V CEF830G 500V RDS(ON) 1.5.
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CET

CEB840A - N-Channel MOSFET

 CEP840A/CEB840A CEF840A N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES Type CEP840A CEB840A CEF840A VDSS 500V 500V 500V.
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Renesas

R5F11EB8AFP - MCU

 RL78/G1G RENESAS MCU 1. OUTLINE 1.1 Features Ultra-low power consumption technology • VDD = single power supply voltage of 2.7 to 5.5 V • HALT mode • .
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CET

CEB840B - N-Channel MOSFET

 CEP840B/CEB840B N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 440V, 9A,RDS(ON) = 0.76Ω @VGS = 10V. Super high dense cell .
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CET

CEB8030LA - N-Channel MOSFET

 CEP8030LA/CEB8030LA N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V, 75A,RDS(ON) = 6.5mΩ @VGS = 10V. RDS(ON) = 9.0mΩ @VGS = 4.5V. Su.
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Vishay

IHD1EB822L - Filter Inductors

 IHD Vishay Dale Filter Inductors, High Current, Axial Leaded ELECTRICAL SPECIFICATIONS Inductance: Measured at 1.0 V with zero DC current Incremental.
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Chino-Excel Technology

CEB8030 - N-Channel Logic Level Enhancement Mode Field Effect Transistor

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