Toshiba
TEC9013 - Silicon NPN Transistor
SILICON NPN EPITAXIAL TYPE (PCT PROCESS)
TEC9013
AUDIO POWER AMPLIFIER APPLICATIONS.
FEATURES
. High hpE = hFE=96-300
. 1 Watts Amplifier Applicatio
Rating:
1
★
(5 votes)
Toshiba
TEC9012 - Silicon PNP Transistor
SILICON PNP EPITAXIAL TYPE (PCT PROCESS)
TEC9012
AUDIO POWER AMPLIFIER APPLICATIONS.
FEATURES . High h FE : hFE=96 - 300 . 1W Output Applications .
Rating:
1
★
(5 votes)
Toshiba
TEC9011 - Silicon NPN Transistor
SILICON NPN EPITAXIAL TYPE (PCT PROCESS)
TEC9011
FM IF, OSC AND AM CONV, IF AMPLIFIER APPLICATIONS
FEATURES . Excellent Noise Figure
NF=2.0dB(Typ.
Rating:
1
★
(4 votes)
Toshiba
TEC9016 - Silicon NPN Transistor
TEC9016
SILICON NPN EPITAXIAL TYPE (PCT PROCESS)
HGIH FREQUENCY AMPLIFIER APPLICATIONS. FM, RF, MIX, IF AMPLIFIER APPLICATIONS.
FEATURES . Small Col
Rating:
1
★
(4 votes)
MAZDABELVU
EC900 - Triode Neutrode
Rating:
1
★
(3 votes)
Philips
EC900 - VHF Triode
page 1 2
EC900
sheet 1 FP
date 1969.01 1999.08.10
Rating:
1
★
(3 votes)
ETC
OEC9011 - Processor
0 E C 9011
; Układ scalony dużej skali integracji OEC 9011 jest procesorem sewo zastosowanym w magnetowidach ORION VP-290 RC, ORION MTC-300 i pochodny
Rating:
1
★
(3 votes)
Toshiba
TEC9015 - Silicon PNP Transistor
TEC9015
SILICON PNP EPITAXIAL TYPE (PCT PROCESS)
AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATKDNS. DRIVER STAGE AMPLIFIER APPLICATIONS.
FEATUR
Rating:
1
★
(3 votes)
Philips
EC90 - S.Q. Tube
page 1 2 3 4 5
EC90
sheet 1 2 3 4 FP
date 1968.12 1968.12 1968.12 1968.12 2001.04.13
Rating:
1
★
(2 votes)
Toshiba
TEC9014 - Silicon NPN Transistor
SILICON NPN EPITAXIAL TYPE (PCT PROCESS)
TEC9014
AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIE R APPLICATIONS. DRIVER STAGE AMPLIFIER APPLICATIONS.
FEATU
Rating:
1
★
(2 votes)
