TEC9013 - Silicon NPN Transistor

Datasheet Summary

Features

. High hpE = hFE=96-300 . 1 Watts Amplifier.

Toshiba

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Datasheet Details

Part number	TEC9013
Manufacturer	Toshiba
File Size	72.03 KB
Description	Silicon NPN Transistor
Datasheet	TEC9013 Datasheet
Additional preview pages of the TEC9013 datasheet.

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Full PDF Text Transcription

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SILICON NPN EPITAXIAL TYPE (PCT PROCESS) TEC9013 AUDIO POWER AMPLIFIER APPLICATIONS. FEATURES . High hpE = hFE=96-300 . 1 Watts Amplifier Applications . Complementary to TEC9012 Unit in mm 5.1 MAX r^ -i i < s CO r-H 0,45 j|l j 0.55 MAX. s || | "i oo 5 0.45 1 1 MAXIMUM RATINGS (Ta=25 C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Junction Temperature Storage Temperature Range SYMBOL VCBO VCEO VEBO ic PC L stg RATING 30 UNIT 800 mA -80 mA 625 mW 150 -55-150 1. EMITTER 2. BASE 3. COLLECTOR EI AT Weight : 0.

Published: Jun 9, 2024 |