ED3 Datasheet | Specifications & PDF Download

PED30D12M N-Channel Enhancement Mode Power MOSFET Description The PED30D12M uses advanced trench technology to provide excellent RDS(ON) and low gate

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N-Channel Enhancement Mode Power MOSFET Description The PED3312M uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It

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PED3025 N-Channel Enhancement Mode Power MOSFET Description The PED3025 uses advanced trench technology and design to provide excellent RDS(ON) with

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N-Channel Enhancement Mode Power MOSFET Description The PED30H10G uses advanced trench technology and design to provide excellent RDS(ON) with low gat

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P-Channel Enhancement Mode Power MOSFET Description The PED3008MA uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It

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PED3310M N-Channel Enhancement Mode Power MOSFET Description The PED3310M uses advanced trench technology to provide excellent RDS(ON), low gate char

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PED305 P-Channel Enhancement Mode Power MOSFET DESCRIPTION The PED305 uses advanced trench technology to provide excellent RDS(ON), low gate charge

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CED30P10/CEU30P10 P-Channel Enhancement Mode Field Effect Transistor FEATURES -100V, -30A, RDS(ON) = 76mΩ @VGS = -10V. RDS(ON) = 92mΩ @VGS = -4.5V. S

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P-Channel Enhancement Mode Power MOSFET Description The PED30P09M uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It

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1ED31xxMC12H (1ED-X3 Compact) EiceDRIVER™ 1ED31xxMC12H Compact Datasheet Single-channel 5.7 kV (rms) isolated gate driver IC with active Miller clam

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1ED31xxMC12H (1ED-X3 Compact) EiceDRIVER™ 1ED31xxMC12H Compact Datasheet Single-channel 5.7 kV (rms) isolated gate driver IC with active Miller clam

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N-Channel Enhancement Mode Power MOSFET Description The PED30H15 uses advanced trench technology and design to provide excellent RDS(ON) with low gate

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P-Channel Enhancement Mode Field Effect Transistor FEATURES -30V, -28A, RDS(ON) = 32mΩ RDS(ON) = 50mΩ @VGS = -10V. @VGS = -4.5V. CED3301/CEU3301 Sup

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1ED34x1Mc12M (1ED-X3 Analog) EiceDRIVER™ 1ED34x1Mc12M Enhanced Datasheet Single-channel 5.7 kV (rms) isolated gate driver IC with adjustable DESAT a

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N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V, 75A , RDS(ON) = 6.6mΩ @VGS = 10V. RDS(ON) = 9.5mΩ @VGS = 4.5V. Super high dense cell

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1ED34x1Mc12M (1ED-X3 Analog) EiceDRIVER™ 1ED34x1Mc12M Enhanced Datasheet Single-channel 5.7 kV (rms) isolated gate driver IC with adjustable DESAT a

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30V N-Channel MOSFETs PDED3098 General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.

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EiceDRIVER™ 2ED314xMC12L (2ED-X3 Compact) Datasheet 2ED314xMC12L (2ED-X3 Compact) Dual-channel isolated gate driver IC with dead-time control Features

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