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PED3312M - N-Channel Enhancement Mode Power MOSFET

semi one

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Datasheet Details

Part number	PED3312M
Manufacturer	semi one
File Size	612.64 KB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	PED3312M-semione.pdf

PED3312M Product details

Description

The PED3312M uses advanced trench technology to provide excellent RDS(ON) and low gate charge.

Features

VDS = 18V, ID = 22 A RDS(ON) < 4.3mΩ @ VGS=4.5V RDS(ON) < 4.6mΩ @ VGS=3.8V RDS(ON) < 5.0mΩ @ VGS=3.0V RDS(ON) < 6.8mΩ @ VGS=2.5V ESD Rating: 4000V HBM.
High Power and current handing capability.
Lead free product is acquired.
Surface Mount Package.

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Published: Oct 17, 2024 |