PED3312M N-Channel Enhancement Mode Power MOSFET

Description

N-Channel Enhancement Mode Power MOSFET .
The PED3312M uses advanced trench technology to provide excellent RDS(ON) and low gate charge.

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PED3312M Datasheet Preview — Preview of PED3312M PDF

Datasheet Specifications

Part number: PED3312M
Manufacturer: semi one
File Size: 612.64 KB
Datasheet: PED3312M-semione.pdf
Description: N-Channel Enhancement Mode Power MOSFET

Features

* VDS = 18V, ID = 22 A RDS(ON) < 4.3mΩ @ VGS=4.5V RDS(ON) < 4.6mΩ @ VGS=3.8V RDS(ON) < 5.0mΩ @ VGS=3.0V RDS(ON) < 6.8mΩ @ VGS=2.5V ESD Rating: 4000V HBM
* High Power and current handing capability
* Lead free product is acquired

PED3312M Distributors

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PED3312M N-Channel Enhancement Mode Power MOSFET semi one

semi one PED3312M-like datasheet