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PED2311DN N-Channel Enhancement Mode Power MOSFET

PED2311DN Description

N-Channel Enhancement Mode Power MOSFET .
The PED2311DN uses advanced trench technology to provide excellent RDS(ON) and low gate charge.

PED2311DN Features

* VDS = 18V, ID = 12A RDS(ON) < 7.5mΩ @ VGS=4.5V Schematic diagram RDS(ON) < 8.6mΩ @ VGS=3.8V RDS(ON) < 10mΩ @ VGS=3.1V RDS(ON) < 11mΩ @ VGS=2.5V ESD Rating: 4000V HBM
* High Power and current handing capability
* Lead free product is acquired
* Surface Mount Package k Applicat

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Datasheet Details

Part number
PED2311DN
Manufacturer
ChipSourceTek
File Size
743.57 KB
Datasheet
PED2311DN-ChipSourceTek.pdf
Description
N-Channel Enhancement Mode Power MOSFET

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N-Channel Enhancement Mode Power MOSFET ChipSourceTek
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