PED2311N - N-Channel Enhancement Mode Power MOSFET
PED2311N Features
* VDS = 20V,ID =12 A RDS(ON) = 8.0mΩ@ VGS=4.5V RDS(ON) = 10.0mΩ@ VGS=2.5V ESD Rating: 2000V HBM
* High Power and current handing capability
* Lead free product is acquired
* Surface Mount Package Application
* PWM application
* Load switch Schematic diagram G2 S2 S2 G1 S1 S1 D
