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PED2311N N-Channel Enhancement Mode Power MOSFET

PED2311N Description

PED2311N N-Channel Enhancement Mode Power MOSFET .
The PED2311N uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.

PED2311N Features

* VDS = 20V,ID =12 A RDS(ON) = 8.0mΩ@ VGS=4.5V RDS(ON) = 10.0mΩ@ VGS=2.5V ESD Rating: 2000V HBM
* High Power and current handing capability
* Lead free product is acquired

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Datasheet Details

Part number
PED2311N
Manufacturer
semi one
File Size
393.89 KB
Datasheet
PED2311N-semione.pdf
Description
N-Channel Enhancement Mode Power MOSFET

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N-Channel Enhancement Mode Power MOSFET semi one
semi one PED2311N-like datasheet