PED2312A Datasheet, Mosfet, semi one

PED2312A Features

• Mosfet
• P-Channel VDS = -20V,ID = -3A RDS(ON) = 110mΩ @ VGS=-2.5V RDS(ON) = 85 m Ω @ VGS=-4.5V
• N-Channel VDS = 20V,I D = 3A RDS(ON) = 65m Ω @ VGS=2.5V RDS(ON) = 50 m Ω @ VGS

PDF File Details

Part number:

PED2312A

Manufacturer:

semi one

File Size:

1.99MB

Download:

📄 Datasheet

Description:

Dual n & p-channel enhancement mode power mosfet. The PED2312A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as

PED2312A Application

• Applications GENERAL FEATURES
• P-Channel VDS = -20V,ID = -3A RDS(ON) = 110mΩ @ VGS=-2.5V RDS(ON) = 85 m Ω @ VGS=-4.5V
• N-Channel

TAGS

PED2312A

semi one

📁 Related Datasheet

PED2312 - Dual P & N-Channel Enhancement Mode Power MOSFET (semi one)
PED2312 Dual Enhancement Mode Power MOSFET (N- and P- Channel) DESCRIPTION The PED2312 uses advanced trench technology to provide excellent RDS(ON),.

PED2310F - N-Channel Enhancement Mode Power MOSFET (semi one)
PED2310F N-Channel Enhancement Mode Power MOSFET Description The PED2310F uses advanced trench technology to provide excellent RDS(ON), low gate cha.

PED2310L - N-Channel Enhancement Mode Power MOSFET (semi one)
PED2310L N-Channel Enhancement Mode Power MOSFET Description The PED2310L uses advanced trench technology to provide excellent RDS(ON), low gate char.

PED2310L - N-Channel Enhancement Mode Power MOSFET (ChipSourceTek)
N-Channel Enhancement Mode Power MOSFET Description The PED2310L uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It .

PED2310N - N-Channel Enhancement Mode Power MOSFET (semi one)
PED2310N N-Channel Enhancement Mode Power MOSFET Description The PED2310N uses advanced trench technology to provide excellent RDS(ON), low gate char.

PED2310N - N-Channel Enhancement Mode Power MOSFET (ChipSourceTek)
N-Channel Enhancement Mode Power MOSFET Description The PED2310N uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It .

PED2311DN - N-Channel Enhancement Mode Power MOSFET (semi one)
PED2311DN N-Channel Enhancement Mode Power MOSFET Description The PED2311DN uses advanced trench technology to provide excellent RDS(ON), low gate ch.

PED2311DN - N-Channel Enhancement Mode Power MOSFET (ChipSourceTek)
N-Channel Enhancement Mode Power MOSFET Description The PED2311DN uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It.

PED2311N - N-Channel Enhancement Mode Power MOSFET (semi one)
PED2311N N-Channel Enhancement Mode Power MOSFET Description The PED2311N uses advanced trench technology to provide excellent RDS(ON), low gate char.

PED2313N - N-Channel Enhancement Mode Power MOSFET (semi one)
PED2313N N-Channel Enhancement Mode Power MOSFET Description The PED2313N uses advanced trench technology to provide excellent RDS(ON), low gate char.