PED2312A Dual N & P-Channel Enhancement Mode Power MOSFET

Description

PED2312A Dual Enhancement Mode Power MOSFET (N- and P- Channel) .
The PED2312A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.

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Datasheet Specifications

Part number: PED2312A
Manufacturer: semi one
File Size: 1.99 MB
Datasheet: PED2312A-semione.pdf
Description: Dual N & P-Channel Enhancement Mode Power MOSFET

Features

* P-Channel VDS = -20V,ID = -3A RDS(ON) = 110mΩ @ VGS=-2.5V RDS(ON) = 85 m Ω @ VGS=-4.5V

PED2312A Distributors

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PED2312A Dual P-Channel Enhancement Mode Power MOSFET semi one

semi one PED2312A-like datasheet