PED2313N Datasheet PDF - semi one N-Channel Enhancement Mode Power MOSFET Specs

PED2313N - N-Channel Enhancement Mode Power MOSFET

Datasheet Summary

Description

The PED2313N uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.

This device is suitable for use as a load switch or in PWM applications.It is ESD protested.

Features

VDS = 20V,ID =9.5A RDS(ON) = 9 mΩ@ VGS=4.5V RDS(ON) = 11m Ω @ VGS=2.5V ESD Rating: 2000V HBM.
High Power and current handing capability.
Lead free product is acquired.
Surface Mount Package.

Datasheet Details

Part number	PED2313N
Manufacturer	semi one
File Size	423.88 KB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	PED2313N Datasheet
Additional preview pages of the PED2313N datasheet.

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Full PDF Text Transcription

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PED2313N N-Channel Enhancement Mode Power MOSFET Description The PED2313N uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications.It is ESD protested. General Features ● VDS = 20V,ID =9.5A RDS(ON) = 9 mΩ@ VGS=4.5V RDS(ON) = 11m Ω @ VGS=2.

Published: Dec 3, 2018 |