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PED2312 - Dual P & N-Channel Enhancement Mode Power MOSFET

Datasheet Summary

Description

The PED2312 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.

This device is suitable for use as a load switch or in PWM applications.

Features

  • P-Channel VDS = -20V,ID = -3A RDS(ON) = 110mΩ @ VGS=-2.5V RDS(ON) = 85 m Ω @ VGS=-4.5V.
  • N-Channel VDS = 20V,I D = 3A RDS(ON) = 65m Ω @ VGS=2.5V RDS(ON) = 50 m Ω @ VGS=4.5V.

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Datasheet preview – PED2312

Datasheet Details

Part number PED2312
Manufacturer semi one
File Size 1.94 MB
Description Dual P & N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet PED2312 Datasheet
Additional preview pages of the PED2312 datasheet.

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Full PDF Text Transcription

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PED2312 Dual Enhancement Mode Power MOSFET (N- and P- Channel) DESCRIPTION The PED2312 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. (7/8)D1 (5/6)D2 (2)G1 (4)G2 GENERAL FEATURES ● P-Channel VDS = -20V,ID = -3A RDS(ON) = 110mΩ @ VGS=-2.5V RDS(ON) = 85 m Ω @ VGS=-4.5V ● N-Channel VDS = 20V,I D = 3A RDS(ON) = 65m Ω @ VGS=2.5V RDS(ON) = 50 m Ω @ VGS=4.
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