PED2312 Datasheet | semi one

DESCRIPTION The PED2312 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. (7/8)D1 (5/6)D2 (2)G1 (4)G2 GENERAL FEATURES - P-Channel VDS = -20V,ID = -3A RDS(ON) = 110mΩ @ VGS=-2.5V RDS(ON) = 85 m Ω @ VGS=-4.5V - N-Channel VDS = 20V,I D = 3A RDS(ON) = 65m Ω @ VGS=2.5V RDS(ON) = 50 m Ω @ VGS=4.5V Application - PWM applications - Load switch - Power management (1)S1 (3)S2 N-Channel MOSFET P-Channel MOSFET Schematic diagram DFN3X2-8L top view Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol N-Channel P-Channel Drain-Source Voltage VDS 20 -20 Gate-Source Voltage ±10 ±12 Drain Current-Continuous ID 3.5 -3 Drain Current -Pulsed (Note 1) Maximum Power Dissipation Operating Junction and Storage Temperature...