PED2312A
PED2312A is Dual N & P-Channel Enhancement Mode Power MOSFET manufactured by semi one.
DESCRIPTION
The PED2312A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications.
GENERAL FEATURES
- P-Channel VDS = -20V,ID = -3A RDS(ON) = 110mΩ @ VGS=-2.5V RDS(ON) = 85 m Ω @ VGS=-4.5V
- N-Channel VDS = 20V,I D = 3A RDS(ON) = 65m Ω @ VGS=2.5V RDS(ON) = 50 m Ω @ VGS=4.5V
(6)D1
(2)D2
(2)G1
(5)G2
(1)S1
(4)S2
N-Channel MOSFET P-Channel MOSFET
Schematic diagram
Application
- PWM applications
- Load switch
- Power management
DFN2X2-6L top view
Absolute Maximum Ratings (TA=25℃unless otherwise noted)
Parameter
Symbol
N-Channel P-Channel
Drain-Source Voltage
VDS 20 -20
Gate-Source Voltage
±10
±12
Drain Current-Continuous
ID 3.5 -3
Drain Current -Pulsed (Note 1) Maximum Power Dissipation Operating Junction and Storage Temperature Range
IDM...
