Datasheet Details
| Part number | PED2312A |
|---|---|
| Manufacturer | semi one |
| File Size | 1.99 MB |
| Description | Dual N & P-Channel Enhancement Mode Power MOSFET |
| Datasheet |
 PED2312A Datasheet
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General Description
The PED2312A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.
This device is suitable for use as a load switch or in PWM applications.
Key Features
- P-Channel VDS = -20V,ID = -3A RDS(ON) = 110mΩ @ VGS=-2.5V RDS(ON) = 85 m Ω @ VGS=-4.5V.
- N-Channel VDS = 20V,I D = 3A RDS(ON) = 65m Ω @ VGS=2.5V RDS(ON) = 50 m Ω @ VGS=4.5V (6)D1 (2)D2 (2)G1 (5)G2 (1)S1 (4)S2 N-Channel MOSFET P-Channel MOSFET Schematic diagram.