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PED2312A - Dual N & P-Channel Enhancement Mode Power MOSFET

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semi one

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PED2312A Dual N & P-Channel Enhancement Mode Power MOSFET by semi one - Datasheet Preview — Datasheet preview – PED2312A

Datasheet Details

Part number	PED2312A
Manufacturer	semi one
File Size	1.99 MB
Description	Dual N & P-Channel Enhancement Mode Power MOSFET
Datasheet	PED2312A Datasheet
Additional preview pages of the PED2312A datasheet.

Product details

Description

The PED2312A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.

Features

P-Channel VDS = -20V,ID = -3A RDS(ON) = 110mΩ @ VGS=-2.5V RDS(ON) = 85 m Ω @ VGS=-4.5V.
N-Channel VDS = 20V,I D = 3A RDS(ON) = 65m Ω @ VGS=2.5V RDS(ON) = 50 m Ω @ VGS=4.5V (6)D1 (2)D2 (2)G1 (5)G2 (1)S1 (4)S2 N-Channel MOSFET P-Channel MOSFET Schematic diagram.

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Published: Dec 3, 2018 |