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PED2312A - Dual N & P-Channel Enhancement Mode Power MOSFET

Datasheet Summary

Description

The PED2312A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.

This device is suitable for use as a load switch or in PWM applications.

Features

  • P-Channel VDS = -20V,ID = -3A RDS(ON) = 110mΩ @ VGS=-2.5V RDS(ON) = 85 m Ω @ VGS=-4.5V.
  • N-Channel VDS = 20V,I D = 3A RDS(ON) = 65m Ω @ VGS=2.5V RDS(ON) = 50 m Ω @ VGS=4.5V (6)D1 (2)D2 (2)G1 (5)G2 (1)S1 (4)S2 N-Channel MOSFET P-Channel MOSFET Schematic diagram.

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Datasheet preview – PED2312A

Datasheet Details

Part number PED2312A
Manufacturer semi one
File Size 1.99 MB
Description Dual N & P-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet PED2312A Datasheet
Additional preview pages of the PED2312A datasheet.

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Full PDF Text Transcription

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PED2312A Dual Enhancement Mode Power MOSFET (N- and P- Channel) DESCRIPTION The PED2312A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. GENERAL FEATURES ● P-Channel VDS = -20V,ID = -3A RDS(ON) = 110mΩ @ VGS=-2.5V RDS(ON) = 85 m Ω @ VGS=-4.5V ● N-Channel VDS = 20V,I D = 3A RDS(ON) = 65m Ω @ VGS=2.5V RDS(ON) = 50 m Ω @ VGS=4.
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