PED2311DN N-Channel Enhancement Mode Power MOSFET

semi one

Description

PED2311DN N-Channel Enhancement Mode Power MOSFET .
The PED2311DN uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.

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Datasheet Specifications

Part number: PED2311DN
Manufacturer: semi one
File Size: 406.32 KB
Datasheet: PED2311DN-semione.pdf
Description: N-Channel Enhancement Mode Power MOSFET

Features

* VDS = 20V,ID =12 A RDS(ON) = 6.0mΩ@ VGS=4.5V RDS(ON) = 6.5mΩ@ VGS=4.2V RDS(ON) = 7.5mΩ@ VGS=3.8V RDS(ON) = 8.2mΩ@ VGS=2.5V ESD Rating: 2000V HBM
* High Power and current handing capability
* Lead free product is acquired
* Surface Mount Package Schematic diagram G2 S2 S2 G1 S1 S1

PED2311DN Distributors

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PED2311DN N-Channel Enhancement Mode Power MOSFET semi one

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