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PED2311DN - N-Channel Enhancement Mode Power MOSFET

semi one

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Datasheet Details

Part number	PED2311DN
Manufacturer	semi one
File Size	406.32 KB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	PED2311DN-semione.pdf

PED2311DN Product details

Description

The PED2311DN uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.

Features

VDS = 20V,ID =12 A RDS(ON) = 6.0mΩ@ VGS=4.5V RDS(ON) = 6.5mΩ@ VGS=4.2V RDS(ON) = 7.5mΩ@ VGS=3.8V RDS(ON) = 8.2mΩ@ VGS=2.5V ESD Rating: 2000V HBM.
High Power and current handing capability.
Lead free product is acquired.
Surface Mount Package Schematic diagram G2 S2 S2 G1 S1 S1 DFN2x3-6L bottom view.

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Published: Dec 3, 2018 |