PED2310L Datasheet, Mosfet, semi one

✔ PED2310L Features

VDS = 20V,ID =8A RDS(ON) =11.5 mΩ @ VGS=4.5V RDS(ON) =12mΩ @ VGS=4.2V RDS(ON) =12.8mΩ @ VGS=3.8V RDS(ON) =15.5mΩ @ VGS=2.5V ESD Rating: 2000V HBM
High Power and curre

✔ PED2310L Application

It is ESD protested. General Features
VDS = 20V,ID =8A RDS(ON) =11.5 mΩ @ VGS=4.5V RDS(ON) =12mΩ @ VGS=4.2

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Part number:

PED2310L

Manufacturer:

semi one

File Size:

644.14kb

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📄 Datasheet

Description:

N-channel enhancement mode power mosfet. The PED2310L uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as

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PED2310L N-Channel Enhancement Mode Power MOSFET semi one