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PED2310L - N-Channel Enhancement Mode Power MOSFET

semi one

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Datasheet Details

Part number	PED2310L
Manufacturer	semi one
File Size	644.14 KB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	PED2310L-semione.pdf

PED2310L Product details

Description

The PED2310L uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.

Features

VDS = 20V,ID =8A RDS(ON) =11.5 mΩ @ VGS=4.5V RDS(ON) =12mΩ @ VGS=4.2V RDS(ON) =12.8mΩ @ VGS=3.8V RDS(ON) =15.5mΩ @ VGS=2.5V ESD Rating: 2000V HBM.
High Power and current handing capability.
Lead free product is acquired.
Surface Mount Package.

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Published: Dec 3, 2018 |