PED2312 Datasheet, Mosfet, semi one

PED2312 Features

• Mosfet
• P-Channel VDS = -20V,ID = -3A RDS(ON) = 110mΩ @ VGS=-2.5V RDS(ON) = 85 m Ω @ VGS=-4.5V
• N-Channel VDS = 20V,I D = 3A RDS(ON) = 65m Ω @ VGS=2.5V RDS(ON) = 50 m Ω @ VGS

PDF File Details

Part number:

PED2312

Manufacturer:

semi one

File Size:

1.94MB

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📄 Datasheet

Description:

Dual p & n-channel enhancement mode power mosfet. The PED2312 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as

PED2312 Application

• Applications (7/8)D1 (5/6)D2 (2)G1 (4)G2 GENERAL FEATURES
• P-Channel VDS = -20V,ID = -3A RDS(ON) = 110mΩ @ VGS=-2.5V RDS(ON) = 85 m Ω

TAGS

PED2312

semi one

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