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PED2310F - N-Channel Enhancement Mode Power MOSFET

semi one

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Datasheet Details

Part number	PED2310F
Manufacturer	semi one
File Size	599.69 KB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	PED2310F-semione.pdf

PED2310F Product details

Description

The PED2310F uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.

Features

VDS = 20V, ID = 6A RDS(ON) < 28mΩ @ VGS=2.5V RDS(ON) < 20mΩ @ VGS=4.5V.
High Power and current handing capability.
Lead free product is acquired.
Surface Mount Package.

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Published: Dec 3, 2018 |