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PED2310F N-Channel Enhancement Mode Power MOSFET

PED2310F Description

PED2310F N-Channel Enhancement Mode Power MOSFET .
The PED2310F uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.

PED2310F Features

* VDS = 20V, ID = 6A RDS(ON) < 28mΩ @ VGS=2.5V RDS(ON) < 20mΩ @ VGS=4.5V
* High Power and current handing capability
* Lead free product is acquired

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Datasheet Details

Part number
PED2310F
Manufacturer
semi one
File Size
599.69 KB
Datasheet
PED2310F-semione.pdf
Description
N-Channel Enhancement Mode Power MOSFET

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N-Channel Enhancement Mode Power MOSFET semi one
semi one PED2310F-like datasheet