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PED2313N - N-Channel Enhancement Mode Power MOSFET

semi one

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Datasheet Details

Part number	PED2313N
Manufacturer	semi one
File Size	423.88 KB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	PED2313N-semione.pdf

PED2313N Product details

Description

The PED2313N uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.

Features

VDS = 20V,ID =9.5A RDS(ON) = 9 mΩ@ VGS=4.5V RDS(ON) = 11m Ω @ VGS=2.5V ESD Rating: 2000V HBM.
High Power and current handing capability.
Lead free product is acquired.
Surface Mount Package.

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Published: Dec 3, 2018 |