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PED2310L N-Channel Enhancement Mode Power MOSFET

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Description

N-Channel Enhancement Mode Power MOSFET .
The PED2310L uses advanced trench technology to provide excellent RDS(ON) and low gate charge.

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Datasheet Specifications

Part number
PED2310L
Manufacturer
ChipSourceTek
File Size
831.73 KB
Datasheet
PED2310L-ChipSourceTek.pdf
Description
N-Channel Enhancement Mode Power MOSFET

Features

* VDS = 18V, ID = 8A RDS(ON) < 15mΩ @ VGS=4.5V Schematic diagram RDS(ON) < 17mΩ @ VGS=3.8V RDS(ON) < 19mΩ @ VGS=3.1V RDS(ON) < 22mΩ @ VGS=2.5V ESD Rating: 4000V HBM
* High Power and current handing capability
* Lead free product is acquired

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