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PED2310N N-Channel Enhancement Mode Power MOSFET

PED2310N Description

N-Channel Enhancement Mode Power MOSFET .
The PED2310N uses advanced trench technology to provide excellent RDS(ON) and low gate charge.

PED2310N Features

* VDS = 18V, ID = 7A RDS(ON) < 16mΩ @ VGS=4.5V Schematic diagram RDS(ON) < 17mΩ @ VGS=4.2V RDS(ON) < 18mΩ @ VGS=3.8V RDS(ON) < 24mΩ @ VGS=2.5V ESD Rating: 4000V HBM
* High Power and current handing capability
* Lead free product is acquired

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Datasheet Details

Part number
PED2310N
Manufacturer
ChipSourceTek
File Size
834.68 KB
Datasheet
PED2310N-ChipSourceTek.pdf
Description
N-Channel Enhancement Mode Power MOSFET

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N-Channel Enhancement Mode Power MOSFET ChipSourceTek
ChipSourceTek PED2310N-like datasheet