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PED3310M - N-Channel Enhancement Mode Power MOSFET

semi one

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Datasheet Details

Part number	PED3310M
Manufacturer	semi one
File Size	1.33 MB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	PED3310M-semione.pdf

PED3310M Product details

Description

The PED3310M uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.

Features

VDS = 20V,ID =9A RDS(ON) < 20mΩ @ VGS=2.5V RDS(ON) < 15mΩ @ VGS=4.5V ESD Rating: 2000V HBM.
High Power and current handing capability.
Lead free product is acquired.
Surface Mount Package.

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Published: Dec 3, 2018 |