EL-325 Datasheet | Specifications & PDF Download

LTK5325 25.3WG   LTK5325 2 5.3W ，、、AB/D 。、 EMI， ，， ， ，。LTK5325  2.8V-5.5V  BOOST   （ALC）  D 、 EMI 2 ，  、 ，。  THD+N=10%，VB

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Features • High Performance, Low Power Atmel® AVR® 8-Bit Microcontroller • Advanced RISC Architecture – 130 Powerful Instructions – Most Single Clock

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www.DataSheet4U.com C to KU BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET FEATURES • SUPER LOW NOISE FIGURE: 0.45 dB TYP at 12 GHz Noise Figure, NF

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Features • High Performance, Low Power AVR® 8-Bit Microcontroller • Advanced RISC Architecture – 130 Powerful Instructions – Most Single Clock Cycle E

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www.DataSheet4U.com PH6325L N-channel TrenchMOS™ logic level FET M3D748 Rev. 01 — 28 April 2004 Preliminary data 1. Product profile 1.1 Description

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Features • High Performance, Low Power Atmel® AVR® 8-Bit Microcontroller • Advanced RISC Architecture – 130 Powerful Instructions – Most Single Clock

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CEM3254L N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 30V, 8.0A, RDS(ON) = 25mΩ @VGS = 10V. RDS(ON) = 28mΩ @VGS = 4.5V.

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MT3256/S N-Channel 60V/50A Power MOSFET Features • Max RDS(on)=10mΩ at VGS =10V,ID=25A • Low gate charge(typical 43 nC) • Low crss(typical 85pF) • 10

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DATA DATA SHEET SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE32584C C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION The NE32

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DATA DATA SHEET SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE32584C C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION The NE32

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www.DataSheet4U.com C to KU BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET FEATURES • SUPER LOW NOISE FIGURE: 0.45 dB TYP at 12 GHz Noise Figure, NF

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www.DataSheet4U.com C to KU BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET FEATURES • SUPER LOW NOISE FIGURE: 0.45 dB TYP at 12 GHz Noise Figure, NF

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www.DataSheet4U.com OM1325SMM OM1325NMM OM1325NKM OM1325NTM OM1325STM OM1325N2M 1.5 AMP NEGATIVE ADJUSTABLE VOLTAGE REGULATOR APPROVED TO DESC DRAW

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Atmel ATmega165A/PA/325A/PA/3250A/PA/645A/P/6450A/P 8-bit Atmel Microcontroller with 16/32/64KB In-System Programmable Flash DATASHEET Features • High

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 MT3250 N-Channel Power MOSFET 50V, 120A, 4.8m: Features   ‡ R DS(on) =4.8m:(Typ.)@ VGS = 10V, I D =60A ‡ High performance trench technology for

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DATA DATA SHEET SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE32584C C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION The NE32

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DATA DATA SHEET SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE32584C C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION The NE32

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www.DataSheet4U.com ¡ Semiconductor MSM27C3252CZ 2,097,152-Word x 16-Bit or 4,194,304-Word x 8-Bit 8-Word x 16-Bit or 16-Word x 8-Bit Page Mode One T

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www.DataSheet.co.kr This version: Feb. 23. 1999 Semiconductor MSC2313258D-xxBS2/DS2 1,048,576-word x 32-bit DYNAMIC RAM MODULE : FAST PAGE MODE TYP

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Preliminary Data Sheet BD1600U520-1325 Ultra Low Profile 1325 Balun 50Ω to 200Ω Balanced Key Patents Lead Microwave Tech Features: ● 1400~1600 MHz ●

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