EM Microelectronic Datasheet | Specifications & PDF Download

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LM135-LM235-LM335 Precision temperature sensors Features ■ Directly calibrated in °K ■ 1°C initial accuracy ■ Operates from 450µA to 5mA ■ Less than

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EM MICROELECTRONIC - MARIN SA EM4237SLIC/SLIX 1k-bit (SLIC) / 2k-bit (SLIX) R/W Memory ISO/IEC15693 Standard Compliant Device General Description T

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LM135-LM235-LM335 Precision temperature sensors Features ■ Directly calibrated in °K ■ 1°C initial accuracy ■ Operates from 450µA to 5mA ■ Less than

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TAB 1 2 TO-3 Figure 1. Internal schematic diagram 2N3055, MJ2955 Complementary power transistors Datasheet - production data Features • Low collector

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D10, D15, D20, D22, C20, C30 MICROMODULES Memory Micromodules General Information for D1, D2 and C Packaging s Micromodules were developed specifical

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I3G4250D /*$  [[PP Features  Wide supply voltage: 2.4 V to 3.6 V  Selectable full scale (245/500/2000 dps)  I2C/SPI digital output int

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EM MICROELECTRONIC - MARIN SA EM3022 Very Low Power 8-Bit 32 kHz RTC Module with Digital Trimming and High Level Integration Description The V3022

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DATASHEET Ɩ EM3021 Ultra Low Power 1-Bit 32 kHz RTC Description The V3021 is a low power CMOS real time clock. Data is transmitted serially as 4 add

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BD243C BD244C Complementary power transistors Features ■ Complementary NPN-PNP devices Applications ■ Power linear and switching Description The devi

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UTC1031 TV VERTICAL DEFLECTION SYSTEM DESCRIPTION LI NEAR I NTEGRATED CI RCUI T The UTC1031 is a monolithic integrated circuit designed for use in t

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www.DataSheet4U.com TIP41CN TIP42CN COMPLEMENTARY SILICON POWER TRANSISTORS PRELIMINARY DATA n n n n n COMPLEMENTARY PNP-NPN DEVICES NEW ENHANCED SE

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BD6xxx Complementary power Darlington transistors Features ■ Good hFE linearity ■ High fT frequency ■ Monolithic Darlington configuration with integr

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M25P40 4 Mbit, Low Voltage, Serial Flash Memory With 25 MHz SPI Bus Interface FEATURES SUMMARY s 4 Mbit of Flash Memory s Page Program (up to 256 Byt

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SVT034R6ND(T) 120A、30V N SVT034R6ND(T) N MOS LVMOS 。 、。 。  120A，30V，RDS(on)（）=3.5m@VGS=10V     dv/dt  100%   RoHS VDS

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® BD909/911 BD910/912 COMPLEMENTARY SILICON POWER TRANSISTORS s STMicroelectronics PREFERRED SALESTYPES DESCRIPTION The BD909 and BD911 are silico

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DP8205 www.depuw.com General Description Dual N-Channel Enhancement Power MOSFET Product Summary Rev3.1 DP8205 uses advanced trench technology to

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D44H8 - D44H11 D45H8 - D45H11 Complementary power transistors Features ■ Low collector-emitter saturation voltage ■ Fast switching speed Applications

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ST7536 POWER LINE MODEM . . . . . . . . . HALF DUPLEX SYNCHRONOUS FSK MODEM - TWO PROGRAMMABLE CHANNELS FOR 600BPS DATA RATE - TWO PROGRAMMABLE CHAN

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