EP7 Datasheet | Specifications & PDF Download

CEP7030L/CEB7030L N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V, 65A,RDS(ON) = 8mΩ @VGS = 10V. RDS(ON) = 12mΩ @VGS = 4.5V. Super h

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N-Channel Enhancement Mode Field Effect Transistor FEATURES 25V, 69A, RDS(ON) = 9mΩ @VGS = 10V. RDS(ON) = 13mΩ @VGS = 4.5V. Super high dense cell desi

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CEP730G/CEB730G CEF730G N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES Type CEP730G CEB730G VDSS 400V 400V CEF730G 40

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CEP740G/CEB740G CEF740G N-Channel Enhancement Mode Field Effect Transistor FEATURES Type CEP740G CEB740G VDSS 400V 400V CEF740G 400V RDS(ON) 0.5

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CEP76139/CEB76139 N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V, 75A, RDS(ON) = 7mΩ @VGS = 10V. RDS(ON) = 10mΩ @VGS = 4.5V. Super hi

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CEP72A3/CEB72A3 N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V, 75A,RDS(ON) = 6mΩ @VGS = 10V. RDS(ON) = 9mΩ @VGS = 4.5V. Super high

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CEP75N06/CEB75N06 N-Channel Enhancement Mode Field Effect Transistor FEATURES 60V, 87A, RDS(ON) = 12mΩ @VGS = 10V. Super high dense cell design for e

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N-Channel Enhancement Mode Field Effect Transistor FEATURES 60V, 87A, RDS(ON) = 12mΩ @VGS = 10V. Super high dense cell design for extremely low RDS(ON

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CEP740N/CEB740N CEF740N N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES Type CEP740N CEB740N CEF740N VDSS 400V 400V 400V

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CEP703AL/CEB703AL N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V, 40A,RDS(ON) = 17mΩ @VGS = 10V. RDS(ON) = 30mΩ @VGS = 4.5V. Super

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FERROXCUBE DATA SHEET EP7 EP cores and accessories Supersedes data of September 2004 2008 Sep 01 Free Datasheet http://www.datasheet4u.com/ Ferrox

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CEP75N06G/CEB75N06G N-Channel Enhancement Mode Field Effect Transistor FEATURES 60V, 75A, RDS(ON) = 13mΩ @VGS = 10V. Super high dense cell design for

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CEP70N10/CEB70N10 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 100V, 70A, RDS(ON) = 16mΩ @VGS = 10V. Super high dense ce

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CEP71A3/CEB71A3 N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V, 70A,RDS(ON) = 7.5mΩ @VGS = 10V. RDS(ON) = 10.5mΩ @VGS = 5V. Super h

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CEP73A3/CEB73A3 N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V, 65A, RDS(ON) = 7.5mΩ(typ) @VGS = 10V. RDS(ON) = 10mΩ(typ) @VGS = 4.5

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CEP70N06/CEB70N06 N-Channel Enhancement Mode Field Effect Transistor FEATURES 60V, 70A, RDS(ON) = 13mΩ @VGS = 10V. Super high dense cell design for ex

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FERROXCUBE DATA SHEET EP7 EP cores and accessories Supersedes data of September 2004 2008 Sep 01 Free Datasheet http://www.datasheet4u.com/ Ferrox

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FERROXCUBE DATA SHEET EP7 EP cores and accessories Supersedes data of September 2004 2008 Sep 01 Free Datasheet http://www.datasheet4u.com/ Ferrox

(16 views)