EPC2 Datasheet | Specifications & PDF Download

68 Product Specifications (Mn-Zn Ferrite) Type : EPC Cores Ordering Code: P4 EPC19 G Material Core Size Gapped AL Value Shape: Type:1 Type:2 D

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eGaN® FET DATASHEET EPC2051 – Enhancement Mode Power Transistor VDS , 100 V RDS(on) , 25 mΩ ID , 1.7 A D G S EPC2051 EFFICIENT POWER CONVERSION HAL

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eGaN® FET DATASHEET EPC2036 – Enhancement Mode Power Transistor VDS , 100 V RDS(on) , 73 mΩ ID , 1.7 A D G S EPC2036 EFFICIENT POWER CONVERSION HA

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eGaN® FET DATASHEET EPC2001C – Enhancement Mode Power Transistor VDS , 100 V RDS(on) , 7 mΩ ID , 36 A D G S EPC2001C EFFICIENT POWER CONVERSION HA

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eGaN® FET DATASHEET EPC2035 – Enhancement Mode Power Transistor VDS , 60 V RDS(on) , 45 mΩ ID , 1.7 A D G S EPC2035 EFFICIENT POWER CONVERSION HAL

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eGaN® FET DATASHEET EPC2022 – Enhancement Mode Power Transistor VDS , 100 V RDS(on) , 3.2 mΩ ID , 90 A D G S EPC2022 EFFICIENT POWER CONVERSION HA

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eGaN® FET DATASHEET EPC2031 – Enhancement Mode Power Transistor VDS , 60 V RDS(on) , 2.6 mΩ ID , 48 A D G S EPC2031 EFFICIENT POWER CONVERSION HAL

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eGaN® FET DATASHEET EPC2016 – Enhancement Mode Power Transistor VDSS , 100 V RDS(ON) , 16 mW ID , 11 A NEW PRODUCT EPC2016 EFFICIENT POWER CONVERS

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eGaN® FET DATASHEET EPC2207 – Enhancement Mode Power Transistor VDS , 200 V RDS(on) , 22 mΩ ID , 14 A D G S EPC2207 EFFICIENT POWER CONVERSION HAL

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eGaN® FET DATASHEET EPC2204 – Enhancement Mode Power Transistor VDS , 100 V RDS(on) , 6 mΩ ID , 29 A D G S EPC2204 EFFICIENT POWER CONVERSION HAL

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eGaN® FET DATASHEET EPC2206 – Automotive 80 V (D-S) Enhancement Mode Power Transistor VDS , 80 V RDS(on) , 2.2 mΩ ID , 90 A AEC-Q101 D G S EPC2206

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eGaN® FET DATASHEET EPC2032 – Enhancement Mode Power Transistor VDS , 100 V RDS(on) , 4 mΩ ID , 48 A D G S EPC2032 EFFICIENT POWER CONVERSION HAL

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eGaN® FET DATASHEET EPC2029 – Enhancement Mode Power Transistor VDS , 80 V RDS(on) , 3.2 mΩ ID , 48 A D G S EPC2029 EFFICIENT POWER CONVERSION HAL

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eGaN® FET DATASHEET EPC2215 – Enhancement Mode Power Transistor VDS , 200 V RDS(on) , 8 mΩ ID , 32 A D G S EPC2215 EFFICIENT POWER CONVERSION HAL

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eGaN® FET DATASHEET EPC2010 – Enhancement Mode Power Transistor VDSS , 200 V RDS(ON) , 25 mW ID , 12 A NEW PRODUCT EPC2010 EFFICIENT POWER CONVERS

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EPC2049 – Enhancement-Mode Power Transistor Preliminary Specification Sheet Status: Engineering Features: • VDS, 40 V • Maximum RDS(on), 5 mΩ • ID, 16

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eGaN® FET DATASHEET EPC2212 - Automotive 100 V (D-S) Enhancement Mode Power Transistor VDS , 100 V RDS(on) , 13.5 mΩ ID , 18 A AEC-Q101 D G S EPC

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eGaN® FET DATASHEET EPC2024 EPC2024 – Enhancement Mode Power Transistor VDS , 40 V RDS(on) , 1.5 mΩ ID , 90 A D G S Gallium Nitride’s exceptional

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Conductive Polymer Aluminum Solid Capacitors Radial Lead Type Series : SEPC Features ● Super low ESR (5 mΩ to 24 mΩ) ● Large capacitance (2700 μF ma

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eGaN® FET DATASHEET EPC2001 – Enhancement Mode Power Transistor VDSS , 100 V RDS(ON) , 7 mW ID , 25 A NEW PRODUCT EPC2001 EFFICIENT POWER CONVERSI

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