F1010N Datasheet | Specifications & PDF Download

PD - 91278 IRF1010N HEXFET® Power MOSFET l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temper

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MURF1005 thru MURF1060 Pb ® Pb Free Plating Product MURF1005 thru MURF1060 ITO-220AB .406(10.3) .381(9.7) .134(3.4) .118(3.0) 10.0 Ampere Isolated

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l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching G l Fully Avalanch

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isc N-Channel MOSFET Transistor ·FEATURES ·With TO-263( D2PAK ) packaging ·High speed switching ·Low gate input resistance ·Standard level gate drive

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Advanced Process Technology Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Le

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isc N-Channel MOSFET Transistor INCHANGE Semiconductor IRF1010N， IIRF1010N ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤11mΩ ·Enhancement

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PD - 94171 Advanced Process Technology Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanch

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Advanced Process Technology Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Le

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PD - 94171 Advanced Process Technology Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanch

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PD - 94966 IRF1010NPbF HEXFET® Power MOSFET Advanced Process Technology Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature

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