SSF1016A (Silikron)
MOSFET
Main Product Characteristics:
VDSS
100V
RDS(on) 13.8mohm(typ.)
ID 75A ①
Features and Benefits:
D2PAK
Advanc
(29 views)
SSF1016 (Silikron Semiconductor Co)
Power switching application
www.DataSheet4U.com SSF1016
Feathers: Advanced trench process technology avalanche energy, 100% test Fully characterized avalanche voltage and
(27 views)
R5F1016AASP (Renesas)
16-Bit Single-Chip Microcontrollers
Datasheet
RL78/G13
RENESAS MCU
R01DS0131EJ0350 Rev.3.50
Jun 30, 2020
True low-power platform (66 μA/MHz, and 0.57 μA for operation with only RTC an
(25 views)
F1016 (Polyfet RF Devices)
RF POWER VDMOS TRANSISTOR
polyfet rf devices
General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military
(24 views)
STF1016C (SamHop Microelectronics)
N-Channel Enhancement Mode Field Effect Transistor
STF1016CGreen
Product
Sa mHop Microelectronics C orp.
N-Channel Enhancement Mode Field Effect Transistor
Ver 1.0
PRODUCT SUMMARY
VDSS
ID RDS(ON)
(24 views)
K6F1016U4B (Samsung semiconductor)
CMOS SRAM
K6F1016U4B Family
Preliminary CMOS SRAM
Document Title
64K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
Revision History
Revision N
(24 views)
SSF1016D (Silikron)
MOSFET
SSF1016D
Feathers: Advanced trench process technology avalanche energy, 100% test Fully characterized avalanche voltage and current
ID =60A BV
(17 views)
FPF1016 (Fairchild Semiconductor)
IntelliMAX 1V Rated Advanced Load Management
FPF1015/6/7/8 IntelliMAXTM 1V Rated Advanced Load Management Products
June 2009
FPF1015/6/7/8
IntelliMAX
Features
0.8 to 1.8V Input Voltage Range
(15 views)
PTF10160 (Ericsson)
85 Watts/ 860-960 MHz GOLDMOS Field Effect Transistor
PTF 10160 85 Watts, 860–960 MHz GOLDMOS ® Field Effect Transistor
Description
The PTF 10160 is an internally matched 85–watt GOLDMOS FET intended for
(14 views)
PTF10161 (Ericsson)
165 Watts/ 869-894 MHz GOLDMOS Field Effect Transistor
PTF 10161 165 Watts, 869–894 MHz GOLDMOS ® Field Effect Transistor
Description
The PTF 10161 is an internally matched,165 watt GOLDMOS FET intended fo
(13 views)
R5F1016EASP (Renesas)
16-Bit Single-Chip Microcontrollers
Datasheet
RL78/G13
RENESAS MCU
R01DS0131EJ0350 Rev.3.50
Jun 30, 2020
True low-power platform (66 μA/MHz, and 0.57 μA for operation with only RTC an
(12 views)
SN74F1016 (Texas Instruments)
16-Bit Schottky Barrier Diode RC Bus-Termination Array
• Designed to Reduce Reflection Noise • Repetitive Peak Forward
Current . . . 300 mA
• 16-Bit Array Structure Suited for
Bus-Oriented Systems
descript
(12 views)
R5F1016CASP (Renesas)
16-Bit Single-Chip Microcontrollers
Datasheet
RL78/G13
RENESAS MCU
R01DS0131EJ0350 Rev.3.50
Jun 30, 2020
True low-power platform (66 μA/MHz, and 0.57 μA for operation with only RTC an
(11 views)
PTF10162 (Ericsson)
18 Watts/ 860-960 MHz GOLDMOS Field Effect Transistor
PTF 10162 18 Watts, 860–960 MHz GOLDMOS™ Field Effect Transistor
Description
The PTF 10162 is an 18 Watt LDMOS FET intended for large signal amplifier
(10 views)
R5F1016DASP (Renesas)
16-Bit Single-Chip Microcontrollers
Datasheet
RL78/G13
RENESAS MCU
R01DS0131EJ0350 Rev.3.50
Jun 30, 2020
True low-power platform (66 μA/MHz, and 0.57 μA for operation with only RTC an
(9 views)