polyfet rf devices General Description Silicon VDM.
Silikron
SSF1016A - MOSFET
Main Product Characteristics: VDSS 100V RDS(on) 13.8mohm(typ.) ID 75A ① Features and Benefits: D2PAK Advanc.
SamHop Microelectronics
STF1016C - N-Channel Enhancement Mode Field Effect Transistor
STF1016CGreen Product Sa mHop Microelectronics C orp. N-Channel Enhancement Mode Field Effect Transistor Ver 1.0 PRODUCT SUMMARY VDSS ID RDS(ON) .
Fairchild Semiconductor
FPF1016 - IntelliMAX 1V Rated Advanced Load Management
FPF1015/6/7/8 IntelliMAXTM 1V Rated Advanced Load Management Products June 2009 FPF1015/6/7/8 IntelliMAX Features 0.8 to 1.8V Input Voltage Range .
Silikron Semiconductor Co
SSF1016 - Power switching application
www.DataSheet4U.com SSF1016 Feathers: Advanced trench process technology avalanche energy, 100% test Fully characterized avalanche voltage and .
Samsung semiconductor
K6F1016U4B - CMOS SRAM
K6F1016U4B Family Preliminary CMOS SRAM Document Title 64K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM Revision History Revision N.
Ericsson
PTF10161 - 165 Watts/ 869-894 MHz GOLDMOS Field Effect Transistor
PTF 10161 165 Watts, 869–894 MHz GOLDMOS ® Field Effect Transistor Description The PTF 10161 is an internally matched,165 watt GOLDMOS FET intended fo.
Renesas
R5F1016AASP - 16-Bit Single-Chip Microcontrollers
Datasheet RL78/G13 RENESAS MCU R01DS0131EJ0350 Rev.3.50 Jun 30, 2020 True low-power platform (66 μA/MHz, and 0.57 μA for operation with only RTC an.
Renesas
R5F1016CASP - 16-Bit Single-Chip Microcontrollers
Datasheet RL78/G13 RENESAS MCU R01DS0131EJ0350 Rev.3.50 Jun 30, 2020 True low-power platform (66 μA/MHz, and 0.57 μA for operation with only RTC an.
Renesas
R5F1016DASP - 16-Bit Single-Chip Microcontrollers
Datasheet RL78/G13 RENESAS MCU R01DS0131EJ0350 Rev.3.50 Jun 30, 2020 True low-power platform (66 μA/MHz, and 0.57 μA for operation with only RTC an.
Renesas
R5F1016EASP - 16-Bit Single-Chip Microcontrollers
Datasheet RL78/G13 RENESAS MCU R01DS0131EJ0350 Rev.3.50 Jun 30, 2020 True low-power platform (66 μA/MHz, and 0.57 μA for operation with only RTC an.
Silikron
SSF1016D - MOSFET
SSF1016D Feathers: Advanced trench process technology avalanche energy, 100% test Fully characterized avalanche voltage and current ID =60A BV.
Texas Instruments
SN74F1016 - 16-Bit Schottky Barrier Diode RC Bus-Termination Array
• Designed to Reduce Reflection Noise • Repetitive Peak Forward Current . . . 300 mA • 16-Bit Array Structure Suited for Bus-Oriented Systems descript.
Polyfet RF Devices
F1016 - RF POWER VDMOS TRANSISTOR
polyfet rf devices General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military .
Ericsson
PTF10160 - 85 Watts/ 860-960 MHz GOLDMOS Field Effect Transistor
PTF 10160 85 Watts, 860–960 MHz GOLDMOS ® Field Effect Transistor Description The PTF 10160 is an internally matched 85–watt GOLDMOS FET intended for .
Ericsson
PTF10162 - 18 Watts/ 860-960 MHz GOLDMOS Field Effect Transistor
PTF 10162 18 Watts, 860–960 MHz GOLDMOS™ Field Effect Transistor Description The PTF 10162 is an 18 Watt LDMOS FET intended for large signal amplifier.