K6F1016U4B Datasheet - Samsung semiconductor

K6F1016U4B CMOS SRAM

K6F1016U4B Family Preliminary CMOS SRAM Document Title 64K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM Revision History Revision No. History 0.0 Initial Draft Draft Date May 2, 2000 Remark Preliminary The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch.

K6F1016U4B Features

* Process Technology: Full CMOS

* Organization: 64K x16 bit

* Power Supply Voltage: 2.7~3.3V

* Low Data Retention Voltage: 1.5V(Min)

* Three state output status and TTL Compatible

* Package Type: 48-FBGA-6.00x7.00 PRODUCT FAMILY Product Family Operati

K6F1016U4B-Samsungsemiconductor.pdf