K6F4016R4G - 256K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
Process Technology: Full CMOS Organization: 256K x16 bit Power Supply Voltage: 1.65~1.95V Low Data Retention Voltage: 1.0V(Min) Three State Outputs Package Type: 48-TBGA-6.00x7.00 The K6F4016R4G families are fabricated by SAMSUNG′s advanced full CMOS process technology.
The families support industr
Preliminary K6F4016R4G Family Document Title CMOS SRAM www.DataSheet4U.com 256K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM Revision History Revision No.
History 0.0 Initial draft Draft Date November 14, 2003 Remark Preliminary The attached datasheets are provided by SAMSUNG Electronics.
SAMSUNG Electronics CO., LTD.
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