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K6F4016R4G

256K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM

K6F4016R4G Features

* CMOS SRAM www.DataSheet4U.com 256K x 16 bit Super Low Power and Low Voltage Full CMOS Static RAM GENERAL DESCRIPTION Process Technology: Full CMOS Organization: 256K x16 bit Power Supply Voltage: 1.65~1.95V Low Data Retention Voltage: 1.0

K6F4016R4G General Description

Process Technology: Full CMOS Organization: 256K x16 bit Power Supply Voltage: 1.65~1.95V Low Data Retention Voltage: 1.0V(Min) Three State Outputs Package Type: 48-TBGA-6.00x7.00 The K6F4016R4G families are fabricated by SAMSUNG′s advanced full CMOS process technology. The families support industr.

K6F4016R4G Datasheet (151.44 KB)

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Datasheet Details

Part number:

K6F4016R4G

Manufacturer:

SAMSUNG Electronics

File Size:

151.44 KB

Description:

256k x16 bit super low power and low voltage full cmos static ram.
Preliminary K6F4016R4G Family Document Title CMOS SRAM www.DataSheet4U.com 256K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM Revis.

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K6F4016R4G 256K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM SAMSUNG Electronics

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