K6F4016R4G Datasheet - SAMSUNG Electronics

K6F4016R4G 256K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM

Process Technology: Full CMOS Organization: 256K x16 bit Power Supply Voltage: 1.65~1.95V Low Data Retention Voltage: 1.0V(Min) Three State Outputs Package Type: 48-TBGA-6.00x7.00 The K6F4016R4G families are fabricated by SAMSUNG′s advanced full CMOS process technology. The families support industr.

Preliminary K6F4016R4G Family Document Title CMOS SRAM www.DataSheet4U.com 256K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM Revision History Revision No. History 0.0 Initial draft Draft Date November 14, 2003 Remark Preliminary The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, pleas.

K6F4016R4G Datasheet (151.44 KB)

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Datasheet Details

Part number:

K6F4016R4G

Manufacturer:

SAMSUNG Electronics

File Size:

151.44 KB

Description:

256k x16 bit super low power and low voltage full cmos static ram.

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K6F4016R4G 256K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM SAMSUNG Electronics

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