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K6F4016U6G-F

256Kx16 bit Super Low Power and Low Voltage Full CMOS Static RAM

K6F4016U6G-F Features

* Preliminary CMOS SRAM GENERAL DESCRIPTION The K6F4016U6G families are fabricated by SAMSUNG′s advanced full CMOS process technology. The families support industrial temperature range and 48 ball Chip Scale Package for user flexibility of s

K6F4016U6G-F General Description

The K6F4016U6G families are fabricated by SAMSUNG′s advanced full CMOS process technology. The families support industrial temperature range and 48 ball Chip Scale Package for user flexibility of system design. The family also supports low data retention voltage for battery back-up operation with lo.

K6F4016U6G-F Datasheet (180.21 KB)

Preview of K6F4016U6G-F PDF

Datasheet Details

Part number:

K6F4016U6G-F

Manufacturer:

Samsung semiconductor

File Size:

180.21 KB

Description:

256kx16 bit super low power and low voltage full cmos static ram.
K6F4016U6G Family Document Title Preliminary CMOS SRAM 256Kx16 bit Super Low Power and Low Voltage Full CMOS Static RAM Revision History Revision N.

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K6F4016U6G-F 256Kx16 bit Super Low Power and Low Voltage Full CMOS Static RAM Samsung semiconductor

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