K6F4016R4E Datasheet - Samsung semiconductor

K6F4016R4E 256K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM

The K6F4016R4E families are fabricated by SAMSUNG′s advanced full CMOS process technology. The families support industrial temperature range and 48 ball Chip Scale Package for user flexibility of system design. The families also support low data retention voltage for battery back-up operation with l.

K6F4016R4E Family Document Title CMOS SRAM www.DataSheet4U.com 256K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM Revision History Revision No. History 0.0 1.0 Initial draft Finalize Draft Date November 10, 2000 March 12, 2001 Remark Preliminary Final The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and products. SAMSUNG Electronics will answer to your questions about device. If you have.

K6F4016R4E_Samsungsemiconductor.pdf

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Datasheet Details

Part number:

K6F4016R4E

Manufacturer:

Samsung semiconductor

File Size:

146.99 KB

Description:

256k x16 bit super low power and low voltage full cmos static ram.

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K6F4016R4E K6F4016R4E 256K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM Samsung semiconductor

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