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K6F4016R4E-F

256K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM

K6F4016R4E-F Features

* Process Technology: Full CMOS

* Organization: 256K x16 bit

* Power Supply Voltage: 1.65~2.20V

* Low Data Retention Voltage: 1.0V(Min)

* Three State Outputs

* Package Type: 48-TBGA-6.00x7.00 GENERAL DESCRIPTION The K6F4016R4E families are fabricated

K6F4016R4E-F General Description

The K6F4016R4E families are fabricated by SAMSUNG′s advan.

K6F4016R4E-F Datasheet (146.99 KB)

Preview of K6F4016R4E-F PDF

Datasheet Details

Part number:

K6F4016R4E-F

Manufacturer:

Samsung semiconductor

File Size:

146.99 KB

Description:

256k x16 bit super low power and low voltage full cmos static ram.
K6F4016R4E Family CMwwOw.SDatSaSRheAet4MU.com Document Title 256K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM Revision History Rev.

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K6F4016R4E-F 256K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM Samsung semiconductor

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