K6F1008S2M Datasheet (Samsung Electronics)

K6F1008S2M, SRAM

The K6F1008V2M, K6F1008S2M and K6F1008R2M families are fabricated by SAMSUNG′s advanced Full CMOS process technology.

The families support various operating temperature range and have various package types for user flexibility of system design.

The families also support low data retention voltage fo

K6F1008V2M, K6F1008S2M, K6F1008R2M Family Document Title 128K x8 bit Super Low Power and Low Voltage Full CMOS Static RAM CMOS SRAM Revision History Revision No.

History 0.0 0.1 Initial draft Revise - Erase 100ns from KM68FS1000 Family - Add 150ns for KM68FS1000 Family - Add 32-sTSOP1 new package - Add high power version ISB1=5.0µA(Max) - Change VDR(Min) 1.0 to 1.5V Finalize - Concept change high power version to low low power version ISB1=5.0µA(Max) - Change super low power version with speci

K6F1008S2M Features

* Process Technology: Full CMOS

* Organization: 128K x8 bit

* Power Supply Voltage K6F1008V2M Family: 3.0V ~ 3.6V K6F1008S2M Family: 2.3V ~ 3.3V K6F1008R2M Family: 1.8V ~ 2.7V

* Low Data Retention Voltage: 1.5V(Min)

* Three state output and TTL Compatible