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K6F1616T6B-EF55 - 1M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM

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Samsung semiconductor

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K6F1616T6B-EF55 1M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM by Samsung semiconductor - Datasheet Preview — Datasheet preview – K6F1616T6B-EF55

Datasheet Details

Part number	K6F1616T6B-EF55
Manufacturer	Samsung semiconductor
File Size	199.14 KB
Description	1M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
Datasheet	K6F1616T6B-EF55 Datasheet
Note	This datasheet PDF includes multiple part numbers: K6F1616T6B-EF55, K6F. Please refer to the document for exact specifications by model.
Additional preview pages of the K6F1616T6B-EF55 datasheet.

Product details

Description

The K6F1616T6B families are fabricated by SAMSUNG′s advanced full CMOS process technology.

Features

Process Technology: Full CMOS.
Organization: 1M x16.
Power Supply Voltage: 2.7~3.6V.
Low Data Retention Voltage: 1.5V(Min).
Three State Outputs.
Package Type: 48-TSOP1-1220F, 48-TBGA - 7.00x7.00 CMOS SRAM.

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Published: Apr 7, 2005 |