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K6F1616T6B-TF55, K6F - 1M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM

K6F1616T6B-TF55 Description

K6F1616T6B Family Document Title 1M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM CMOS SRAM Revision History Revision No.History 0.0.
The K6F1616T6B families are fabricated by SAMSUNG′s advanced full CMOS process technology.

K6F1616T6B-TF55 Features

* Process Technology: Full CMOS
* Organization: 1M x16
* Power Supply Voltage: 2.7~3.6V
* Low Data Retention Voltage: 1.5V(Min)
* Three State Outputs

📥 Download Datasheet

This datasheet PDF includes multiple part numbers: K6F1616T6B-TF55, K6F. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
K6F1616T6B-TF55, K6F
Manufacturer
Samsung semiconductor
File Size
199.14 KB
Datasheet
K6F-1616.pdf
Description
1M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
Note
This datasheet PDF includes multiple part numbers: K6F1616T6B-TF55, K6F.
Please refer to the document for exact specifications by model.

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x16 bit Super Low Power and Low Voltage Full CMOS Static RAM Samsung semiconductor
Samsung semiconductor K6F1616T6B-TF55-like datasheet