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K6F1616T6B - 1M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM

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Samsung semiconductor

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K6F1616T6B 1M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM by Samsung semiconductor - Datasheet Preview — Datasheet preview – K6F1616T6B

Datasheet Details

Part number	K6F1616T6B
Manufacturer	Samsung semiconductor
File Size	199.14 KB
Description	1M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
Datasheet	K6F1616T6B Datasheet
Note	This datasheet PDF includes multiple part numbers: K6F1616T6B, K6F. Please refer to the document for exact specifications by model.
Additional preview pages of the K6F1616T6B datasheet.

Product details

Description

The K6F1616T6B families are fabricated by SAMSUNG′s advanced full CMOS process technology.

Features

Process Technology: Full CMOS.
Organization: 1M x16.
Power Supply Voltage: 2.7~3.6V.
Low Data Retention Voltage: 1.5V(Min).
Three State Outputs.
Package Type: 48-TSOP1-1220F, 48-TBGA - 7.00x7.00 CMOS SRAM.

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Published: Apr 7, 2005 |