K6F1616R6A - CMOS SRAM

Samsung semiconductor

K6F1616R6A Description

K6F1616R6A Family Preliminary CMOS SRAM Document Title 1M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM Revision History Revision No.
The K6F1616R6A families are fabricated by SAMSUNG′s advanced full CMOS process technology.

K6F1616R6A Features

* Process Technology: Full CMOS
* Organization: 1M x16
* Power Supply Voltage: 1.65~2.2V
* Low Data Retention Voltage: 1.0V(Min)
* Three State Outputs

📥 Download Datasheet

K6F1616R6A Datasheet Preview — Preview of K6F1616R6A PDF

Datasheet Details

Part number: K6F1616R6A
Manufacturer: Samsung semiconductor
File Size: 104.04 KB
Datasheet: K6F1616R6A-Samsungsemiconductor.pdf
Description: CMOS SRAM

📁 Related Datasheet

K6F1008R2M - SRAM (Samsung Electronics)
K6F1008S2M - SRAM (Samsung Electronics)
K6F1008V2M - SRAM (Samsung Electronics)
K6F4016R4G - 256K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM (SAMSUNG Electronics)

📌 All Tags

CMOS SRAM Samsung semiconductor

Samsung semiconductor K6F1616R6A-like datasheet

K6F1616R6C - 1M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
K6F1616T6B - 1M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
K6F1616T6B-EF55 - 1M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
K6F1616T6B-EF70 - 1M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
K6F1616T6B-F - 1M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
K6F1616T6B-TF55 - 1M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM